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出 处:《Journal of Semiconductors》2016年第2期97-99,共3页半导体学报(英文版)
摘 要:To achieve high pumping efficiency and stability, a wavelength stabilized 980 nm broad area distributed feedback laser was realized. A nanoimprint lithography technique was used to fabricate the first-order gratings. The stripe width was 90 #m and the cavity length was 2 mm. Under continuous wave condition, the output laser power reached 1.2 W, with the slope efficiency of 0.7 W/A. The current and thermal dependence of the spectrum peak was measured to be approximately 0.19 nm/A and 0.064 nm/K respectively, and the wavelength-locking range reached over 50 ℃.To achieve high pumping efficiency and stability, a wavelength stabilized 980 nm broad area distributed feedback laser was realized. A nanoimprint lithography technique was used to fabricate the first-order gratings. The stripe width was 90 #m and the cavity length was 2 mm. Under continuous wave condition, the output laser power reached 1.2 W, with the slope efficiency of 0.7 W/A. The current and thermal dependence of the spectrum peak was measured to be approximately 0.19 nm/A and 0.064 nm/K respectively, and the wavelength-locking range reached over 50 ℃.
关 键 词:semiconductor laser wavelength stable distributed feedback NANOIMPRINT
分 类 号:TN248[电子电信—物理电子学]
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