A transient-enhanced NMOS low dropout voltage regulator with parallel feedback compensation  

作　　者：王菡 谭林 

机构地区：[1]Analog IC Design Department, 24th Research Institute of China Electronics Technology Group Corporation

出　　处：《Journal of Semiconductors》2016年第2期131-136,共6页半导体学报（英文版）

摘　　要：This paper presents a transient-enhanced NMOS low-dropout regulator （LDO） for portable applications with parallel feedback compensation. The parallel feedback structure adds a dynamic zero to get an adequate phase margin with a load current variation from 0 to 1 A. A class-AB error amplifier and a fast charging/discharging unit are adopted to enhance the transient performance. The proposed LDO has been implemented in a 0.35 μm BCD process. From experimental results, the regulator can operate with a minimum dropout voltage of 150 mV at a maximum 1 A load and IQ of 165 μA. Under the full range load current step, the voltage undershoot and overshoot of the proposed LDO are reduced to 38 mV and 27 mV respectively.This paper presents a transient-enhanced NMOS low-dropout regulator （LDO） for portable applications with parallel feedback compensation. The parallel feedback structure adds a dynamic zero to get an adequate phase margin with a load current variation from 0 to 1 A. A class-AB error amplifier and a fast charging/discharging unit are adopted to enhance the transient performance. The proposed LDO has been implemented in a 0.35 μm BCD process. From experimental results, the regulator can operate with a minimum dropout voltage of 150 mV at a maximum 1 A load and IQ of 165 μA. Under the full range load current step, the voltage undershoot and overshoot of the proposed LDO are reduced to 38 mV and 27 mV respectively.

关 键 词：parallel feedback compensation class-AB amplifier fast charging/discharging unit transient re-sponse low-dropout regulator （LDO） 

分 类 号：TM44[电气工程—电器] TP273[自动化与计算机技术—检测技术与自动化装置]