A highly linear power amplifier for WLAN  

作　　者：金婕 史佳 艾宝丽 张旭光 

机构地区：[1]Shanghai University of Engineering Science,Shanghai 201620,China [2]Shanghai Advanced Research Institute,Chinese Academy of Sciences,Shanghai 201210,China

出　　处：《Journal of Semiconductors》2016年第2期137-141,共5页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.61201244);the Natural Science Fund of SUES(No.E1-0501-14-0168)

摘　　要：A three-stage power amplifier （PA） for WLAN application in 2.4-2.5 GHz is presented. The proposed PA employs an adaptive bias circuit to adjust the operating point of the PA to improve the linearity of the PA. Two methods to short the 2nd harmonic circuit are compared in the area of efficiency and gain of the PA. The PA is taped out in the process of 2/zm InGaP/GaAs HBT and is tested by the evaluation board. The measured results show that 31.5 dB power gain and 29.3 dBm PldB with an associated 40.4% power added efficiency （PAE） under the single tone stimulus. Up to 26.5 dBm output power can be achieved with an error vector magnitude （EVM） of lower than 3% under the 64QAM/OFDM WLAN stimulus.A three-stage power amplifier （PA） for WLAN application in 2.4-2.5 GHz is presented. The proposed PA employs an adaptive bias circuit to adjust the operating point of the PA to improve the linearity of the PA. Two methods to short the 2nd harmonic circuit are compared in the area of efficiency and gain of the PA. The PA is taped out in the process of 2/zm InGaP/GaAs HBT and is tested by the evaluation board. The measured results show that 31.5 dB power gain and 29.3 dBm PldB with an associated 40.4% power added efficiency （PAE） under the single tone stimulus. Up to 26.5 dBm output power can be achieved with an error vector magnitude （EVM） of lower than 3% under the 64QAM/OFDM WLAN stimulus.

关 键 词：power amplifier InGaP/GaAs HBT EVM （error vector magnitude） adaptive bias circuit WLAN 

分 类 号：TN925.93[电子电信—通信与信息系统] TN722.75[电子电信—信息与通信工程]