均匀光栅DFB激光器光电特性研究  

Research on the Photoelectric Characteristics of Uniform Grating DFB-LD

作　　者：赵润[1] 张晓光[1] 曹晨涛 车相辉[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2016年第2期119-123,共5页Semiconductor Technology

摘　　要：光栅结构的设计和制作直接决定了分布反馈（DFB）半导体激光器光电特性的优劣。采用传输矩阵法模拟了不同光栅耦合因子下随机相位对均匀光栅DFB芯片特性的影响,获得了芯片的光电参数分布。通过分析耦合因子对芯片光电参数分布的影响,提高了DFB芯片的成品率。设计并制备了基于Al Ga In As材料体系的脊波导DFB激光器,最终使芯片双峰比例仅为7.7%、成品率达到60%。对合格品在-40~105℃下的P-I特性和在-40~85℃下的光谱进行了测试,结果表明芯片性能优良,芯片远场发散角为25°和21°。芯片的小信号频带响应和眼图测试结果表明芯片完全满足2.5 Gbit/s的应用要求。The design and production of grating structure directly determines the photoelectric characteristics of a distributed feedback laser diode （DFB-LD）. The impact of random phase on the characteristics of the uniform grating DFB chip were simulated with transfer matrix method, and the photoelectric parameters distribution was obtained. The yield of the DFB chip was improved by analyzing the impact of coupling factor on photoelectric parameter distribution of the DFB chip. The ridge waveguide DFB （RWG-DFB） laser diode based on A1GalnAs materials was designed and fabricated. The ratio for dou- ble-peak is only 7.7% and the yield can reach to 60%. The P-I characteristics of qualified products from -40 ℃ to 105 ℃ and the spectrum from -40 ℃ to 85 ℃ were tested. The test results show that the chip has a high performance. The far-field divergence angles are 25° and 21°, respectively. The test results of the small signal frequency responses and eye diagram indicate that the DFB chip can fully meet the application requirements of 2.5 Gbit/s.

关 键 词：分布反馈半导体激光器(DFB-LD) 光栅 耦合因子 成品率 边模抑制比(SMSR) 

分 类 号：TN248.4[电子电信—物理电子学]