含有缺口的铁磁纳米线中畴壁的钉扎效应  

Domain wall pinning effect in notched ferromagnetic nanowires

作　　者：卢晓丰[1,2] 李飞[1,2] 孙周洲[1,2] 

机构地区：[1]苏州大学物理与光电.能源学部,江苏苏州215006 [2]江苏省薄膜材料重点实验室,江苏苏州215123

出　　处：《苏州科技学院学报（自然科学版）》2016年第1期52-56,共5页Journal of Suzhou University of Science and Technology （Natural Science Edition）

基　　金：国家自然科学基金资助项目(11274236);教育部高等学校博士学科点专项科研基金资助项目(20123201110003)

摘　　要：研究了磁纳米线中头对头畴壁在缺口处关于钉扎场的问题。采用微磁学软件模拟了当施加外磁场后,钉扎场与缺口的几何尺寸以及相对位置的变化情况。研究发现当缺口宽度与纳米线宽度比一定时,钉扎场的大小随着纳米线宽度的增加而减小,并且缺口的长度越长,钉扎效应越明显。除此之外,还讨论了缺口的相对钉扎位置与钉扎场的关系。最后讨论了畴壁的手性对钉扎效应的影响。The notched magnetic domain walls in ferromagnetic nanowires have attracted wide attention in spintronics due to their strong pinning effect for the application of logic and memory devices. In this paper, we inves- tigated numerically with the OOMMF software the relationship between the pinning field and the notch size and relative positions in nanowires. The results show that the pinning field of domain wall increases as the notch length increases and decreases as the notch width increases. The longer the notch length is, the more obvious the pinning effect becomes. The pinning field is lowest when the notch is located in the middle along the nanowire width for domain walls with two kinds of chirality.

关 键 词：磁畴壁 缺口 钉扎场 

分 类 号：O482.51[理学—固体物理]