检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
机构地区:[1]兰州大学磁学与磁性材料教育部重点实验室,甘肃兰州730000
出 处:《实验室研究与探索》2015年第12期13-15,共3页Research and Exploration In Laboratory
基 金:国家自然科学基金项目(51202102);教育部CERS项目
摘 要:随着半导体制造工业的迅速发展,微光刻与微加工技术作为其"核心工艺"已经成为目前高校科学研究和工业研发的一个热门领域。它主要包括图形数据处理技术、图形曝光技术和图形加工技术。介绍了微光刻与微加工技术的基本工艺流程,讨论和分析了影响图形加工质量的工艺参数和主要因素,以及需要注意的关键事项和常见问题的解决方法。结合本实验室的工作,通过实验探索和工艺流程的优化,确定了光刻胶Futurres PR1-1000A型的最佳光刻工艺参数。With the rapid development of the semiconductor manufacturing industry,micro-lithography and microfabrication technology as its "core technology "have been hot issues in current research of universities and industrial institutes. The technologies are composed of graphic data processed technology,pattern exposured and fabricated technology. Firstly,the normal process of the micro-photolithography and micro-fabrication was introduced in this article,process was divided into eight steps specifically. More importantly,the parameters in the processing and the major factors affecting the quality of pattern were investigated in detail for each step. And the key items attended and the solutions of the common problems were also discussed. Meanwhile,it showed the optimal lithography parameters of Futurres PR1-1000 A in the micro-photolithography and micro-fabrication processes through experiments in our laboratory.
关 键 词:微光刻与微加工 工艺参数 涂胶 曝光 刻蚀和剥离
分 类 号:TN305.7[电子电信—物理电子学] TN405
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.49