高价金属元素掺杂ITO薄膜性能的研究现状  

Research Status on Properties of ITO Films Doped by High-valence Metal Elements

作　　者：杨钊[1] 崔晓芳[1] 郗雨林[1] 

机构地区：[1]中国船舶重工集团公司第725研究所,河南洛阳471023

出　　处：《热加工工艺》2016年第2期14-17,共4页Hot Working Technology

摘　　要：铟锡氧化物(ITO)薄膜是一种光电性能优良的二元透明导电氧化物(TCO)薄膜,随着其在应用领域的不断拓展,其各项性能需要进一步提升。向ITO薄膜中掺入高价金属元素是一种有效的改性方法,该方法已经逐步成为研究热点。Indium-tin oxide（ITO） thin film is a kind of binary transparent conducting oxide（TCO） films with excellent optoelectric properties. The overall performance of ITO film should be furtherly improved as new applications extending continuously. High-valence metal element doping techniques can effectively enhance the properties of ITO film, and thus becomes a research focus.

关 键 词：透明导电氧化物 ITO薄膜 掺杂 

分 类 号：TN304.0[电子电信—物理电子学]