种子层及掺杂浓度对溶胶-凝胶法制备ZnO∶Al薄膜光电性能的影响  

Influence of Al Concentration and Seed Layers on Electro-optical Properties of Al Doped ZnO Thin Films Prepared by Sol-gel

作　　者：彭寿[1] 汤永康[1] 王芸[1] 金良茂[1] 甘治平[1] 王东[1] 王萍萍[1] 操芳芳[1] 

机构地区：[1]蚌埠玻璃工业设计研究院浮法玻璃新技术国家重点实验室,蚌埠233000

出　　处：《硅酸盐通报》2016年第2期543-549,共7页Bulletin of the Chinese Ceramic Society

基　　金：国家"973"计划(2012CB724608);安徽省自然科学基金(1408085MKL67);安徽省科技攻关计划项目(1301021015)

摘　　要：本文采用溶胶-凝胶法以提拉的方式在普通玻璃基底上制备出n型掺杂具有优良光电性能的氧化锌掺铝（AZO）薄膜,并以磁控溅射AZO薄膜为种子层引导液相法所制备AZO薄膜生长。Al掺杂浓度区间为0.25at%～5.00at%。通过X射线衍射仪、场发射扫描电子显微镜、轮廓仪、方块电阻测试仪、霍尔效应测试仪、紫外-可见-红外分光光度计分别研究了薄膜物相、微观结构、膜厚及光电性能,进一步分析了Al掺杂浓度、种子层对薄膜光电性能的影响。结果表明：经10次提拉所制备薄膜可见光透过率85%以上。Al掺杂浓度、种子层的引入对AZO薄膜的光电性能有重要影响。无种子层时,掺杂浓度为0.50at%的AZO薄膜在5%H2、95%N2还原气氛下于550℃保温60 min得到最优电学性能,方块电阻约为166Ω/□,电阻率约为1.99×10-3Ω·cm;预镀AZO种子层所制备薄膜方块电阻下降到约42Ω/□,电阻率下降到约7.56×10-4Ω·cm。Aluminum doped （n-type doped ） zinc oxide （AZO） films with excellent electro-optical properties were prepared on glass substrate by sol-gel dip-coating process. The seed layers were also prepared by magnetron sputtering which guide the growth of that films prepared by liquid phase method. The range of Al doping concentration is 0.25at%-5.00at%. The phase, microstructure, film thickness and electro-optical properties of AZO films were investigated by X-ray diffraction （XRD）, field emission scanning electron microscopy （FESEM）, contourgraph, four-probe resistance meter, hall effect tester and UV-visible-infrared spectrophotometer, respectively. And the influence of Al concentration and seed layer on electro-optical properties of AZO films also had been analyzed. The results show that the visible light transmittance of AZO films prepared by pulling 10 times is above 85%. The Al doping concentration and the pre-deposition of the seed layer are crucial for enhancing the electro-optical properties of AZO films. And the best electrical properties that without seed layer pre-deposited are obtained when AZO films with 0.50at% Al doped annealed in a reducing atmosohere（5% H2 、95% N2 ） at 550 ℃ for 1 h the sheet resistance and resisitivity of the AZO films are 166 Ω/□ and 1.99 × 10^-3 Ω· cm, they decrease to 42 Ω/□ and 7.56 × 10-4Ω· cm when the films were pre-deposited with a seed layer.

关 键 词：Al掺杂浓度 种子层 铝掺杂氧化锌薄膜 光电性能 

分 类 号：TB34[一般工业技术—材料科学与工程]