退火升温速率对LaNiO_3薄膜结构和电学性能的影响  

Effect of Annealing Heating Rate on Structural and Electrical Properties of LaNiO_3 Thin Films

作　　者：姜涛[1] 祝元坤[1] 赵爽[1] 李磊[1] 余远根 王现英[1] 

机构地区：[1]上海理工大学材料科学与工程学院,上海200093

出　　处：《人工晶体学报》2016年第2期424-429,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(11402149);上海市自然科学基金(14ZR1428000);沪江学者基金(B14006)

摘　　要：采用溶胶-凝胶法在SiO2/Si(100)衬底上制备了镍酸镧(LaNiO3,LNO)薄膜,并利用XRD、SEM、AFM和半导体参数分析仪等研究了退火升温速率对LNO薄膜结构和电学性能的影响。结果表明,溶胶-凝胶法制备的LNO薄膜呈现赝立方钙钛矿型多晶结构,呈(110)择优取向生长;薄膜表面平整、均匀、无裂纹。随着退火升温速率的增加,LNO薄膜的晶粒尺寸先增大后减小;其电阻率先减小后增大。在退火升温速率为20℃/min时,LNO薄膜晶粒尺寸达到最大值94nm,电阻率达到最小值9.5×10-4Ω·m。LaNiO3（ LNO） thin films were synthesized on SiO2/ Si（ 100） substrates via the Sol-Gel method,and the effect of heating rate on structural and electrical properties of LNO films was systematically investigated. The structural and electrical properties of LNO thin films were characterized by X-ray diffraction,scanning electron microscopy,atomic force microscope,semiconductor parameter meter. The results show that LNO thin film synthesized by the Sol-Gel method is of polycrystalline phase with perovskite tetragonal structure and shows preferred orientation of（ 110） peak. The surface of LNO thin films is smooth,uniform and crack free. With increasing of heating rate,the grain size of LNO thin films increases at first then decreases. Meantime,the resistivity of the LNO thin films decreases at first then increases. With a heating rate of 20 ℃ / min,the minimum value of resistivity is 9. 5 × 10-4Ω·m.

关 键 词：溶胶-凝胶法 LaNiO3薄膜 退火升温速率 电阻率 

分 类 号：O484[理学—固体物理]