ITO/BZO复合薄膜制备及在非晶硅薄膜太阳能电池的应用  

Fabrication of ITO/BZO Composite Thin Film and Application to Amorphous Silicon Thin Film Solar Cells

作　　者：黄建华[1] 刘怀周 

机构地区：[1]湖南理工职业技术学院太阳能工程系,湘潭411104 [2]湖南共创光伏科技有限公司,衡阳421001

出　　处：《人工晶体学报》2016年第2期515-519,共5页Journal of Synthetic Crystals

基　　金：2014年教育厅科学研究项目(14C0534)

摘　　要：采用低压化学气相沉积(LPCVD)法在沉积ITO薄膜的玻璃衬底上制备了硼掺杂氧化锌(BZO)薄膜,研究了ITO缓冲层对ITO/BZO复合薄膜表观形貌、导电性能和光学性能的影响;并研究了ITO/BZO薄膜在非晶硅薄膜太阳能电池的应用。结果表明,以ITO作为缓冲层来沉积BZO薄膜,有利于BZO晶粒尺寸的长大,并可以显著提高BZO薄膜的导电能力。ITO/BZO复合薄膜具有相对较高的导电能力和光学透光率,应用在非晶硅薄膜太阳能电池时转化效率提高0.20%。Boron-doped zinc oxide（ BZO） was deposited by low pressure chemical vapor deposition（ LPCVD） method on the glass substrate with tin-doped indium oxide（ ITO） buffer layer. The effects of ITO buffer layer on the structural,electrical and optical properties of BZO film and composite ITO / BZO film were investigated. Amorphous silicon thin film solar cells were fabricated on BZO film and composite ITO / BZO film. It was found that the grain size of BZO film with ITO buffer layer was larger than that of without ITO buffer layer. The conductivity and transmittance of composite ITO / BZO film was enhanced with thinner thickness and the conversion efficiency of amorphous silicon solar cell using thinner ITO /BZO film as front electrode was found to be increased by 0. 20%.

关 键 词：透明导电氧化物 硼掺杂氧化锌 复合薄膜 低压化学沉积 非晶硅薄膜太阳能电池 

分 类 号：O484.1[理学—固体物理]