退火处理对ZnO薄膜压敏性能的影响  

Effect of Annealing Temperature on Varister Properties of ZnO-Based Ceramic Coatings

作　　者：花银群[1] 季平[1] 陈瑞芳[1] 赵杉月 

机构地区：[1]江苏大学机械工程学院,镇江212013

出　　处：《真空科学与技术学报》2016年第2期141-145,共5页Chinese Journal of Vacuum Science and Technology

摘　　要：采用射频磁控溅射技术在Si(111)衬底上生长ZnO基陶瓷薄膜,分别在650℃,750℃,850℃和900℃下退火,研究了退火温度对ZnO基陶瓷薄膜压敏性能的影响。结果表明,随着退火温度的升高,薄膜的压敏电压逐渐增大,非线性系数先增大后减小,漏电流密度先减小后增大。850℃退火处理后的薄膜具有较为理想的综合电性能,其非线性系数为14.93,压敏电压为4.82 V,漏电流密度为0.36μA/mm^2。The ZnO-based ceramic coatings were deposited by RF magnetron sputteringon Si（111） substrate.The impact of the synthesis conditions,including but not limited to the annealing temperature,argon flow-rate and pressure,on the microstructures and varister properties were investigate with X-ray diffraction,energy dispersive spectroscopy and scanning electron microscopy.The results show that the annealing temperature significandy affects the varister properties.To be specific,as the annealing temperature increased from 650℃ up to 900℃,the nonlinear voltage increases,and the nonlinear coefficient changed in an increase-decrease mode,accompanied by the changes in a decrease-increase manner of the leakage current density.Annealed at 850℃,the optimized properties include;a nonlinear coefficient of 14.93,a nonlinear voltage of 4.82 V and a leakage current density of 0.36 μA/mm-2.

关 键 词：无机非金属材料 ZnO基陶瓷薄膜 射频磁控溅射 退火温度 

分 类 号：TB43[一般工业技术]