Effects of post-annealing treatment on the structure and photoluminescence properties of CdS/PS nanocomposites prepared by sol-gel method  

作　　者：张红燕 

机构地区：[1]School of Physical Science and Technology, Xinjiang University

出　　处：《Optoelectronics Letters》2016年第2期81-84,共4页光电子快报（英文版）

基　　金：supported by the Xinjiang Science and Technology Project(No.2015211C275)

摘　　要：CdS nanocrystals have been successfully grown on porous silicon(PS) by sol-gel method. The plan-view field emission scanning electron microscopy(FESEM) shows that the pore size of PS is smaller than 5 μm in diameter and the agglomerates of Cd S are broadly distributed on the surface of PS substrate. With the increase of annealing time, the Cd S nanoparticles grow in both length and diameter along the preferred orientation. The cross-sectional FESEM images of Zn O/PS show that Cd S nanocrystals are uniformly penetrated into all PS layers and adhere to them very well. photoluminescence(PL) spectra demonstrate that the intensity of PL peak located at about 425 nm has almost no change after the annealing time increases. The range of emission wavelength of Cd S/PS is from 425 nm to 455 nm and the PL intensity is decreasing with the annealing temperature increasing from 100 °C to 200 °C.

关 键 词：annealing FESEM preferred uniformly annealed adhere exciton sectional broadly decreasing 

分 类 号：TN304[电子电信—物理电子学]