Fabrication of grating structures on silicon carbide by femtosecond laser irradiation and wet etching  

作　　者：高博 陈涛 Vanthanh Khuat 司金海 侯洵 

机构地区：[1]Key Laboratory for Physical Electronics and Devices of the Ministry of Education,Shaanxi Key Lab of Information Photonic Technique,School of Electronics & Information Engineering,Xi’an Jiaotong University

出　　处：《Chinese Optics Letters》2016年第2期59-62,共4页中国光学快报（英文版）

基　　金：supported by the Collaborative Innovation Center of Suzhou Nano Science and Technology;supported by the National Basic Research Program of China (No.2012CB921804);the National Natural Science Foundation of China (Nos.11204236 and 61308006);The SEM work was done at the International Center for Dielectric Research (ICDR),Xi’an Jiaotong University,Xi’an,China

摘　　要：A method for fabricating deep grating structures on a silicon carbide （SIC） surface by a femtosecond laser and chemical-selective etching is developed. Periodic lines corresponding to laser-induced structure change （LISC） are formed by femtosecond laser irradiation, and then the SiC material in the LISC zone is removed by a mixed solution of hydrofluoric acid and nitric acid to form grating grooves. Grating grooves with a high-aspect ratio of approximately 25 are obtained. To obtain a small grating period, femtosecond laser exposure through a phase mask was used to fabricate grating structures with a 1.07 μm period on the surface of the SiC.A method for fabricating deep grating structures on a silicon carbide （SIC） surface by a femtosecond laser and chemical-selective etching is developed. Periodic lines corresponding to laser-induced structure change （LISC） are formed by femtosecond laser irradiation, and then the SiC material in the LISC zone is removed by a mixed solution of hydrofluoric acid and nitric acid to form grating grooves. Grating grooves with a high-aspect ratio of approximately 25 are obtained. To obtain a small grating period, femtosecond laser exposure through a phase mask was used to fabricate grating structures with a 1.07 μm period on the surface of the SiC.

关 键 词：Aspect ratio Diffraction gratings Hydrofluoric acid IRRADIATION Ultrashort pulses 

分 类 号：TQ163.4[化学工程—高温制品工业] TN249[电子电信—物理电子学]