Total ionizing dose effects of domestic Si Ge HBTs under different dose rates  

作　　者：刘默寒 陆妩 马武英 王信 郭旗 何承发 姜柯 李小龙 荀明珠 

机构地区：[1]Key Laboratory of Functional Materials and Devices for Special Environments,Xinjiang Key Laboratory of Electronic Information Materials and Devices,Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences [2]School of Physics Science and Technology,Xinjiang University [3]School of Physics Science and Technology, Xinjiang University

出　　处：《Chinese Physics C》2016年第3期104-108,共5页中国物理C（英文版）

摘　　要：The total ionizing radiation（TID） response of commercial NPN silicon germanium hetero-junction bipolar transistors（Si Ge HBTs） produced domestically are investigated under dose rates of 800 m Gy（Si）/s and 1.3 m Gy（Si）/s with a Co-60 gamma irradiation source. The changes of transistor parameters such as Gummel characteristics, and excess base current before and after irradiation, are examined. The results of the experiments show that for the KT1151, the radiation damage is slightly different under the different dose rates after prolonged annealing, and shows a time dependent effect（TDE）. For the KT9041, however, the degradations of low dose rate irradiation is higher than for the high dose rate, demonstrating that there is a potential enhanced low dose rate sensitivity（ELDRS） effect for the KT9041. The possible underlying physical mechanisms of the different dose rates responses induced by the gamma rays are discussed.The total ionizing radiation（TID） response of commercial NPN silicon germanium hetero-junction bipolar transistors（Si Ge HBTs） produced domestically are investigated under dose rates of 800 m Gy（Si）/s and 1.3 m Gy（Si）/s with a Co-60 gamma irradiation source. The changes of transistor parameters such as Gummel characteristics, and excess base current before and after irradiation, are examined. The results of the experiments show that for the KT1151, the radiation damage is slightly different under the different dose rates after prolonged annealing, and shows a time dependent effect（TDE）. For the KT9041, however, the degradations of low dose rate irradiation is higher than for the high dose rate, demonstrating that there is a potential enhanced low dose rate sensitivity（ELDRS） effect for the KT9041. The possible underlying physical mechanisms of the different dose rates responses induced by the gamma rays are discussed.

关 键 词：SiGe HBTs TID ELDRS annealing 

分 类 号：TN322.8[电子电信—物理电子学] TN386.1