横向结构参数对SiGe HBT小信号模型参量的影响  

Effects of Lateral Structure Parameters on Small Signal Model Parameters of SiGe HBTs

作　　者：赵彦晓[1] 张万荣 谢红云[1] 黄鑫[1] 张良浩[1] 金子超[1] 付强[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《北京工业大学学报》2016年第4期508-512,共5页Journal of Beijing University of Technology

基　　金：国家自然科学基金资助项目(61574010);北京市自然科学基金资助项目(4142007)

摘　　要：为了分析了发射极条宽、条长、条数等横向结构参数对SiGe HBT小信号模型参数的影响,通过Jazz 0.35μm BiCMOS SiGe HBT的Y参量,得出了在不同横向结构参数下SiGe HBT的小信号模型参数.结果表明:增加发射极条宽、条长、条数时,小信号模型中的等效电阻值减小、等效电容增大、跨导也增大.在此基础上,分析了SiGe HBT横向结构参数对合成的有源电感特性的影响.在设计不同性能的有源电感时,所得结果对有源器件横向结构参数的选取有一定的指导意义.The effects of lateral structure parameters including emitter width, length and stripe number on small signal model parameters of SiGe HBTs were analyzed. Parameters Y for different sizes of Jazz 0. 35μm BiCMOS SiGe HBT were obtained, and the parameters of small signal model were correspondingly calculated. Results show that as the emitter width, length and stripe number increase, the resistance in the model decreases while the capacitance and transconductance increase. Moreover, the effect of SiGe HBTs lateral structure parameters on performance of the synthesized active inductor was analyzed. The results have a reference meaning for the selection of lateral structure parameters of active device used in synthesis of a active inductor.

关 键 词：横向结构 Y参量 小信号模型参数 SIGE HBT 

分 类 号：TN722.3[电子电信—电路与系统]