应用于TCXO的高性能温度传感器设计  

Design of High Performance Temperature Sensor Used for TCXO

作　　者：林长龙[1] 郭振义[1] 孙欣茁 梁科[1] 王锦[1] 李国峰[1] 

机构地区：[1]南开大学电子信息与光学工程学院,天津300071

出　　处：《半导体技术》2016年第3期169-173,214,共6页Semiconductor Technology

基　　金：天津市科技计划资助项目(14ZCZDGX00034)

摘　　要：介绍了一款基于0.4μm Bi CMOS工艺应用于温度补偿晶体振荡器的高性能温度传感器的设计。该温度传感器利用基极-发射极电压(VBE)减去与绝对温度成正比(PTAT)电流在电阻上的压降的原理,产生了与温度成线性的输出电压。采用包含两个串联发射结电压和低失调运算放大器的PTAT电流产生器,实现了高精度的PTAT电流;采用具有负温度系数的电阻,补偿了VBE的高阶温度特性;采用共源共栅结构,提高了输出电压的电源抑制。后仿真结果表明,当电源电压为3.3 V,温度范围为-40~85℃时,温度传感器的输出电压范围为0.964~1.490V,输出电压的斜率范围为-4.245×10-3^-4.160×10-3,斜率变化范围为8.5×10-5,表明该温度传感器具有非常高的线性度。The design of high performance temperature sensor based on 0. 4 μm Bi CMOS technology used for temperature compensated crystal oscillator was presented. The temperature sensor utilized the principle of the base-emitter voltage VBEminus the voltage drop of proportional to absolute temperature（ PTAT） current on the resistance to generate a linear output voltage versus temperature. The high precision PATA current was generated by using the PTAT current generator which consists of two series emitter voltage and low offset operational amplifiers. And the negative temperature coefficient resistance was used to compensate the high order temperature characteristics of VBE. The power supply rejection of the output voltage was also improved by using the cascode structure. The post simulation results show that when the supply voltage is 3. 3 V and the temperature is from- 40 ℃ to 85 ℃,the output voltage range of the temperature sensor is 0. 964-1. 490 V,the slope range of the output voltage is-4. 245 ×10^-3--4. 160 ×10^-3,and the variation range of the slope is 8. 5×10^-5,which shows that the temperature sensor has a very high linearity.

关 键 词：温度补偿晶体振荡器(TCXO) 温度传感器 与绝对温度成正比(PTAT)电流 低失调 高电源抑制 

分 类 号：TN433[电子电信—微电子学与固体电子学] TP212.11[自动化与计算机技术—检测技术与自动化装置]