低阈值980nm单模半导体激光器  

980 nm Single-Mode Semiconductor Laser of Low Threshold-Current

作　　者：赵润[1] 宁吉丰[1] 车相辉[1] 蒋红旺[1] 陈宏泰[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2016年第3期210-214,共5页Semiconductor Technology

摘　　要：通过数值模拟和实验手段相结合的方法,优化了980 nm单模半导体激光器结构。给出了一种通过计算脊波导单模激光器的光场和电流场的匹配关系来预测芯片阈值电流变化规律的方法。采用金属有机物化学气相淀积方法生长了带有腐蚀停止层的Al Ga As/In Ga As量子阱结构激光二极管外延片,通过腐蚀停止层实现了对芯片脊波导深度的精确控制,芯片的一致性显著提高。980 nm单模半导体激光器芯片的阈值电流为11 m A,在注入电流为100 m A条件下,其光功率为93 m W,快慢轴方向远场发散角分别为40°和8°。The structure of the 980 nm single-mode semiconductor laser were optimized by numerical simulation and experiment methods. A method to get the variation regulation of the threshold current was provided by calculating the matching the optical field and current field of the ridge waveguide singlemode laser. The diode laser epi-wafers with Al Ga As / In Ga As quantum well and etch-stop layer were fabricated by the metal organic chemical vapor deposition method. The depth of the ridge was accuracy controlled by etch-stop layer. The chip uniformity was improved observably. The threshold current of the980 nm single-mode semiconductor laser chip is 11 m A. The output power is 93 m W with a injection current of 100 m A. The far-field divergence angles are 40° and 8°,corresponding to the directions of the fast and slow axes.

关 键 词：激光二极管 单模 脊波导 腐蚀停止层 金属有机物化学气相淀积(MOCVD) 

分 类 号：TN248.4[电子电信—物理电子学]