基于ZnO-CuO纳米线结构的新型光电器件  

A novel photoelectric device based on ZnO-CuO nanowire structure

作　　者：袁晓贤[1] 苏霜萍 单新治 苗玉[1] 隋国荣[1] 

机构地区：[1]上海理工大学教育部光学仪器与系统工程研究中心,上海市现代光学系统重点实验室,上海200093

出　　处：《光电子．激光》2016年第2期127-131,共5页Journal of Optoelectronics·Laser

基　　金：国家重点基础研究发展计划(2015CB352001);国家自然科学基金(61205094);上海市重点学科建设(S30502);校培育计划(13XGM11)资助项目

摘　　要：为了获得高效的整流器件和微型短波长的发光器件,采用原子层沉积(ALD)法和水浴法合成了具有ZnO-CuO的结构器件。对制备的样品进行了光学和电学特性的检测,获得了22.79的整流比和17.69的理想因子,且门限电压和整流比等特性随CuO厚度增加而减小。在光致发光(PL)特性上,具有显著的由ZnO带电激发的385nm紫外光波峰,同时伴有由深能级散射激发的572nm的可见光波峰,且随着CuO厚度的增加紫外光波峰减小,可见光峰变大。实验结果表明,本文制备的器件可以应用在纳米型二极管、光电探测器以及微型光源等领域。To obtain the efficient rectification device and the mini ultra-short wavelength luminescent de- vice,a novel device based on the ZnO-CuO structure is fabricated by the atomic layer deposition （ALD） method and immersion method. By the experiments, we tested the I-V characteristics curve and Log I-V characteristics. By detecting the electrical and optical characteristics of the device, the results get the rec- tification ratio of 22.79 and the ideality factor of 17.69. Simultaneously,the threshold voltage and rectifi- cation ratio decrease with increasing the thickness of CuO. To photoluminescence （PL） characteristics, the device obtains the remarkable energy peak at the wavelength of 385 nm,and follows a feeble energy peak at the wavelength of 572 nrn. Here,the peak of near-band edge emission reduces with increasing the thickness of CuO,and the peak of deep energy level scattering enlarges. The device has the potential applications in the fields of the superior performance nano diode, field-effect tube and micro-photoluminescent device.

关 键 词：原子沉积法 水浴法 ZnO—CuO纳米线 整流特性 光致发光 

分 类 号：TN252[电子电信—物理电子学]