Ce掺杂0.9Bi_4Ti_3O_(12)-0.1K_(0.5)Na_(0.5)NbO_3铋层状压电陶瓷结构与性能研究（英文）  

Microstructure and Electrical Properties of Cerium-Doped Bismuth-Layer 0.9Bi_4Ti_3O_(12)-0.1K_(0.5)Na_(0.5)NbO_3 Piezoelectric Ceramics

作　　者：涂娜[1] 江向平[1] 陈超[1] 傅小龙[1] 杨帆[1] 

机构地区：[1]景德镇陶瓷学院江西省先进陶瓷材料重点实验室,江西景德镇333001

出　　处：《稀有金属材料与工程》2016年第2期292-296,共5页Rare Metal Materials and Engineering

基　　金：National Natural Science Foundation of China(51262009,50162014);Natural Science Foundation of Jiangxi(20133ACB20002,20132BAB202002,20142BAB316009);Colleges and Universities "Advanced Ceramics" Scientific and Technological Innovation Team of Jiangxi;Foundation of Jiangxi Provincial Department of Education(GJJ13630)

摘　　要：采用传统固相法制备了CeO_2掺杂0.9Bi_4Ti_3O_(12)-0.1K_(0.5)Na_(0.5)NbO_3(BTO-KNN)铋层状陶瓷材料。系统研究了CeO_2掺杂对BTO-KNN基陶瓷物相结构、微观结构以及电性能的影响。结果表明:所有陶瓷样品均为单一的铋层状结构:BTO-KNN基陶瓷的压电性能随着CeO_2的掺杂而显著提高,损耗明显降低。当CeO_2掺量为0.75%(质量分数)时,样品具有最佳的电性能:d_(33)=28 pC/N,介电损耗tanδ=0.29%,机械品质因数Q_m=2897,剩余极化强度P_r=11.83μC/cm^2,且居里温度T_c高达615℃;研究结果表明CeO_2掺杂0.9Bi_4Ti_3O_(12)-0.1K_(0.5)Na_(0.5)NbO_3铋层状陶瓷是一种潜在的高温陶瓷材料。The cerium doped 0.9Bi4Ti3O（12）-0.1K（0.5）Na（0.5）NbO3（BTO-KNN） piezoelectric ceramics were synthesized using conventional solid state processing. The effects of CeO2 doping on the microstructure and the electrical properties of BTO-KNN ceramics were investigated. It is found that the ceramics possess a pure phase of bismuth oxide layer-type structure. The piezoelectric properties of BTO-KNN-based ceramics are significantly improved after cerium doping. The piezoelectric constant d33, dielectric loss tan δ, mechanical quality factor Qm and remanent polarization Pr for the BTO-KNN ceramics with 0.75 wt% CeO2 dopant are found to be 28 pC /N, 0.29%, 2897, 11.83 μC/cm^2, respectively, and with high Curie temperature TC（~615 °C） and stable piezoelectric properties, demonstrating that the cerium doped BTO-KNN piezoelectric ceramics are the promising candidates for high-temperature applications.

关 键 词：铋层状 压电陶瓷 微观结构 BI4TI3O12 

分 类 号：TQ174.1[化学工程—陶瓷工业]