一种反向串联忆阻突触电路的设计及应用  

An anti-series memristive synapse circuit design and its application

作　　者：杨玖[1] 王丽丹[1] 段书凯[1] 

机构地区：[1]西南大学电子信息工程学院,重庆400715

出　　处：《中国科学：信息科学》2016年第3期391-403,共13页Scientia Sinica(Informationis)

基　　金：教育部新世纪优秀人才支持计划项目(批准号:教技函[2013]47号);教育部"春晖计划"科研项目(批准号:z2011148);国家自然科学基金项目(批准号:61372139;61101233;609-72155);留学人员科技活动项目(批准号:渝人社办[2012]186号);重庆市高等学校优秀人才支持计划项目(批准号:渝教人[2011]65号);重庆市高等学校青年骨干教师资助计划项目(批准号:渝教人[2011]65号);中央高校基本科研业务费项目(批准号:XDJK2014A009;XDJK2013B011)资助

摘　　要：忆阻器的记忆效应类似于生物神经系统中突触的功能,其纳米级尺寸、低功耗和高集成度等特性,使得忆阻突触具有仿生智能的信息处理能力,这对构建神经形态系统具有重要意义.本文在改进忆阻器模型的基础上,设计了一种反向串联忆阻开关型突触电路.当开关断开时,周期方波电压对忆阻值(权值)进行调节,实现权值更新;当开关闭合时,突触电路中的忆阻值被用于连接权值来存储信息.该突触电路具有STDP(spike-time-dependent-lasticity)仿生学习能力和阻值线性连续特性.本文将此突触电路应用于交叉阵列的图像存储中,优化了存储方案,讨论了噪声电压对图像存储的影响,进行了数值分析和仿真比较.实验结果表明:所提出的存储方案比单忆阻器交叉阵列存储方法更具有可靠性和鲁棒性.The memory effect of memristors is similar to a synaptic in neuromorphic systems.It will be of great significance for a neuromorphic system that memristors have nanoscale size,low-power consumption,and high integration,which give the nieniristive synapse more intelligent information processing ability.On the basis of an improved memristor model,this paper addresses a switching synaptic circuit with two memristors in reverse series.When the switch is off,the input square-wave voltage is used to adjust the synaptic weight.When the switch is on,the memristance in the circuit is used to store information.This synapse circuit has a spike-timedependent-plasticity（STDP） bionic learning ability and continuous linear resistance characteristics.In this study,the synapse circuit is introduced to a nieniristive crossbar array to store images.We optimize storage solutions,discuss the impact of the noise voltage of image storage,and conduct a comparison of numerical analysis and analog simulation.Experimental results show that the proposed storage solution is more reliable and robust than single-memristor cross-array storage.

关 键 词：脉冲时间依赖可塑性 忆阻器 突触电路 交叉阵列 图像存储 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]