780nm波段低填充因子半导体激光器列阵的光束质量研究  

Optical Quality of 780 nm Low Filling Factor Diode Laser Array

作　　者：贾鹏[1,2] 秦莉[1] 陈泳屹[1] 李秀山[1,2] 张俊[1] 张建[1] 张星[1] 宁永强[1] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室,长春130033 [2]中国科学院大学,北京100039

出　　处：《半导体光电》2016年第1期27-29,44,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金重点项目(61234004;61204055;61434005;61176045)

摘　　要：为了获得高功率高光束质量激光输出,设计并制备了一种780nm波段5发光单元列阵器件,其采用10μm宽窄条形波导,各发光单元中心间距为100μm,填充因子仅为10%。在准连续注入电流由1.2A增加到2.5A条件下,该器件的输出光束侧向光学参量积由0.666mm·mrad增加至0.782mm·mrad。注入电流为2.5A时,该器件实现了单边准连续506mW的高光束质量激光输出。In order to obtain high power high optical quality lasing,a 780 nm diode array device with five array units was designed.The device is fabricated with strip width of 10μm,separation between laser array units of 100μm and filling factor of 10%.The quasi-continuous wave injection current increases from 1.2Ato 2.5A,the lateral beam parameter product of the device increases from 0.666mm·mrad to 0.782mm·mrad.When the injection current is 2.5A,the device achieves high optical quality lasing with an output power of 506 mW from one cavtiy facet.

关 键 词：半导体激光器列阵 低填充因子 侧向光学参量积 

分 类 号：TN248.4[电子电信—物理电子学]