PbS/Cu_2O异质结的制备和性能表征  

Preparation and Characterization of PbS/Cu_2O Heterojunction

作　　者：谢思思[1] 杨峰[1] 席金芳 邹龙生[1] 蔡芳共[1,2] 程翠华[1,3] 赵勇[1,3] 阚香[1] 张勇[1] 

机构地区：[1]西南交通大学材料先进技术教育部重点实验室,成都610031 [2]西部超导材料科技股份有限公司,西安710018 [3]新南威尔士大学材料科学与工程学院

出　　处：《半导体光电》2016年第1期77-81,共5页Semiconductor Optoelectronics

基　　金：国家磁约束核聚变能研究专项资助项目(2011GB112001;2013GB110001);国际合作项目(2013DFA51050);国家自然科学基金项目(51271155;51377138);国家"863"计划项目(2014AA032701);高等学校博士学科点专项科研基金项目(20120184120024)

摘　　要：采用电化学沉积法在酸性电解液中制备n型Cu_2O薄膜,并对其进行Cl掺杂,制备Cu_2O-Cl结构。然后利用连续离子吸附法在样品薄膜上复合PbS量子点。通过SEM和UV-vis对样品进行表征,并对样品的光电化学性能进行了测试。结果表明,未掺杂的Cu_2O对PbS量子点的吸附能力较强一些,经PbS敏化后的样品在太阳光谱的吸收拓展到了近红外区,PbS/Cu_2O和PbS/Cu_2O-Cl复合结构的光电化学性能均有所增加,尤其是短路电流密度。PbS复合后的样品转换效率最高仅为0.67%,主要原因是两者能级的不匹配,形成异质结时引入界面态,得不到理想的转换效率。n-Cu2 O films were prepared by using KCl as the precursor,and Cl-doped Cl structure were obtained by making electrodeposition in acid electrolyte. Then PbS/Cu2 O composite structure was fabricated with SILAR method.The samples were characterized by scanning electron microscopy（SEM）and UV-vis absorption spectrum.In addition,the conversion efficiency of composite electrode materials was characterized under visible light with the measured density of 100mV·cm^-2.The results demonstrat that the optical absorption is widened to near infrared region and the photo-current is greatly improved after the modification of PbS.The top photoelectric conversion efficiency is only 0.67%,which due to the interface state between the mismatched band gap of PbS and Cu2 O.

关 键 词：CU2O Cl掺杂 PBS 异质结 光电化学性能 

分 类 号：TM23[一般工业技术—材料科学与工程]