High-quality ZnO growth, doping, and polarization effect  

作　　者：汤琨 顾书林 叶建东 朱顺明 张荣 郑有炓 

机构地区：[1]School of Electronic Science & Engineering, Nanjing University, Nanjing 210023, China [2]Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009, China

出　　处：《Journal of Semiconductors》2016年第3期1-13,共13页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.61025020,61274058,61322403,61504057,61574075);the Natural Science Foundation of Jiangsu Province(Nos.BK2011437,BK20130013,BK20150585);the Priority Academic Program Development of Jiangsu Higher Education Institutions;the Fundamental Research Funds for the Central Universities

摘　　要：The authors have reported their recent progress in the research field of ZnO materials as well as the corresponding global advance. Recent results regarding（1） the development of high-quality epitaxy techniques,（2） the defect physics and the Te/N co-doping mechanism for p-type conduction, and（3） the design, realization,and properties of the ZnMgO/ZnO hetero-structures have been shown and discussed. A complete technology of the growth of high-quality ZnO epi-films and nano-crystals has been developed. The co-doping of N plus an isovalent element to oxygen has been found to be the most hopeful path to overcome the notorious p-type hurdle. High mobility electrons have been observed in low-dimensional structures utilizing the polarization of ZnMgO and ZnO.Very different properties as well as new physics of the electrons in 2DEG and 3DES have been found as compared to the electrons in the bulk.The authors have reported their recent progress in the research field of ZnO materials as well as the corresponding global advance. Recent results regarding（1） the development of high-quality epitaxy techniques,（2） the defect physics and the Te/N co-doping mechanism for p-type conduction, and（3） the design, realization,and properties of the ZnMgO/ZnO hetero-structures have been shown and discussed. A complete technology of the growth of high-quality ZnO epi-films and nano-crystals has been developed. The co-doping of N plus an isovalent element to oxygen has been found to be the most hopeful path to overcome the notorious p-type hurdle. High mobility electrons have been observed in low-dimensional structures utilizing the polarization of ZnMgO and ZnO.Very different properties as well as new physics of the electrons in 2DEG and 3DES have been found as compared to the electrons in the bulk.

关 键 词：ZnO homo-and hetero-epitaxy native defects p-type doping tellurium-nitrogen co-doping ZnMgO/ZnO hetero-structure 

分 类 号：TN304.21[电子电信—物理电子学]