Radiation-induced 1/f noise degradation of bipolar linear voltage regulator  

作　　者：赵启凤 庄奕琪 包军林 胡为 

机构地区：[1]School of Microelectronics, Xidian University, Xi'an 710071, China [2]School of Michano-electronic Engineering, Xidian University, Xi'an 710071, China

出　　处：《Journal of Semiconductors》2016年第3期53-57,共5页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.61076101,61204092)

摘　　要：Radiation-induced 1/f noise degradation in the LM117 bipolar linear voltage regulator is studied. Based on the radiation-induced degradation mechanism of the output voltage, it is suggested that the band-gap reference subcircuit is the critical component which leads to the 1/f noise degradation of the LM117. The radiation makes the base surface current of the bipolar junction transistors of the band-gap reference subcircuit increase, which leads to an increase in the output 1/f noise of the LM117. Compared to the output voltage, the 1/f noise parameter is more sensitive, it may be used to evaluate the radiation resistance capability of LM117.Radiation-induced 1/f noise degradation in the LM117 bipolar linear voltage regulator is studied. Based on the radiation-induced degradation mechanism of the output voltage, it is suggested that the band-gap reference subcircuit is the critical component which leads to the 1/f noise degradation of the LM117. The radiation makes the base surface current of the bipolar junction transistors of the band-gap reference subcircuit increase, which leads to an increase in the output 1/f noise of the LM117. Compared to the output voltage, the 1/f noise parameter is more sensitive, it may be used to evaluate the radiation resistance capability of LM117.

关 键 词：radiation bipolar linear voltage regulator 1/f noise degradation 

分 类 号：TM44[电气工程—电器]