Total dose effects on the g–r noise of JFET transistors  

作　　者：胡为 庄奕琪 包军林 赵启凤 

机构地区：[1]School of Mechano-Electronic Engineering, Xidian University

出　　处：《Journal of Semiconductors》2016年第3期58-60,共3页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.61076101,61204092);the Fundamental Research Funds for the Central Universities(No.JB150412)

摘　　要：Silicon junction field effect transistors（JFETs） have been exposed to Co-（60）-rays to study radiationinduced effects on their dc characteristics and noise. The devices have been irradiated and measured at room temperature up to an accumulated 100 krad（Si） dose of radiation at a dose rate of 0.1 rad（Si）/s. During irradiation,the generation–recombination（g–r） noise increase has been observed while the dc characteristics of the transistors were kept unchanged. The increasing of the density of the same type point defects and their probability of trapping and detrapping carriers caused by irradiation have been used to explain the g–r noise amplitude increase, while the g–r noise characteristic frequency has only a slight change.Silicon junction field effect transistors（JFETs） have been exposed to Co-（60）-rays to study radiationinduced effects on their dc characteristics and noise. The devices have been irradiated and measured at room temperature up to an accumulated 100 krad（Si） dose of radiation at a dose rate of 0.1 rad（Si）/s. During irradiation,the generation–recombination（g–r） noise increase has been observed while the dc characteristics of the transistors were kept unchanged. The increasing of the density of the same type point defects and their probability of trapping and detrapping carriers caused by irradiation have been used to explain the g–r noise amplitude increase, while the g–r noise characteristic frequency has only a slight change.

关 键 词：radiation junction field-effect transistors generation–recombination noise 

分 类 号：TN386[电子电信—物理电子学]