Effect of polishing parameters on abrasive free chemical mechanical planarization of semi-polar(1122) aluminum nitride surface  

作　　者：Khushnuma Asghar D.Das 

机构地区：[1]School of Engineering Sciences and Technology, University of Hyderabad

出　　处：《Journal of Semiconductors》2016年第3期115-121,共7页半导体学报（英文版）

基　　金：financial support from the Department of Science and Technology(DST),Government of India(No,SR/S2/Cmp-0009/2011);partial support from the Board of Research in Nuclear Sciences(BRNS),Department of Atomic Energy(DAE),Government of India(No.-34/14/43/2014-BRNS)with ATC

摘　　要：An abrasive free chemical mechanical planarization（AFCMP） of semi-polar（1122） Al N surface has been demonstrated. The effect of slurry p H, polishing pressure, and platen velocity on the material removal rate（MRR） and surface quality（RMS roughness） have been studied. The effect of polishing pressure on the AFCMP of the（1122） Al N surface has been compared with that of the（1122） Al Ga N surface. The maximum MRR has been found to be 562 nm/h for the semi-polar（1122） Al N surface, under the experimental conditions of 38 k Pa pressure,90 rpm platen velocity, 30 rpm carrier velocity, slurry p H 3 and 0.4 M oxidizer concentration. The best root mean square（RMS） surface roughness of 1.2 nm and 0.7 nm, over a large scanning area of 0.70×0.96 mm^2, has been achieved on AFCMP processed semi-polar（1122） AlN and（AlGaN） surfaces using optimized slurry chemistry and processing parameters.An abrasive free chemical mechanical planarization（AFCMP） of semi-polar（1122） Al N surface has been demonstrated. The effect of slurry p H, polishing pressure, and platen velocity on the material removal rate（MRR） and surface quality（RMS roughness） have been studied. The effect of polishing pressure on the AFCMP of the（1122） Al N surface has been compared with that of the（1122） Al Ga N surface. The maximum MRR has been found to be 562 nm/h for the semi-polar（1122） Al N surface, under the experimental conditions of 38 k Pa pressure,90 rpm platen velocity, 30 rpm carrier velocity, slurry p H 3 and 0.4 M oxidizer concentration. The best root mean square（RMS） surface roughness of 1.2 nm and 0.7 nm, over a large scanning area of 0.70×0.96 mm^2, has been achieved on AFCMP processed semi-polar（1122） AlN and（AlGaN） surfaces using optimized slurry chemistry and processing parameters.

关 键 词：Al N AFCMP chemical mechanical planarization material removal rate surface roughness 

分 类 号：TN305.2[电子电信—物理电子学]