基于GaN管芯的LS波段宽带功率放大器的设计  

Design of LS Wideband Power Amplifier Based on GaN Broadband HEMT

作　　者：赵家敏[1] 张瑞[1] 安士全[1] 

机构地区：[1]中国电子科技集团公司第38研究所,合肥230031

出　　处：《中国电子科学研究院学报》2015年第6期642-645,共4页Journal of China Academy of Electronics and Information Technology

摘　　要：针对超宽带(0.8 GHz-5 GHz)功率放大器的设计要求,提出了一种可行的实现方法,采用小信号S参数,利用基于微带线分布参数元件的方法进行输入输出阻抗的宽带匹配电路设计。采用TriQuint公司的TGF2023-02管芯进行电路仿真,测试结果表明,带内增益大于12 dB,饱和功率输出大于39 dBm。测试结果与仿真吻合,验证了此方法的有效性。Concerning the design goal of a wideband power amplifier working across 0.8- 5 GHz,this paper proposes an available design methodology to select the optimal input and output impedance based on small signal S parameter,and realizes broadband matching using distributed components.Based on the methodology,using the GaN HEMT TGF2023- 02 from TriQuint,simulation is performed and demo board is produced.The measurement results indicate that within 0.8 GHz- 5 GHz,delivered power is higher than 39 dBm and the small signal gain is higher than 12 dB.Hence,the methodology is well verified.

关 键 词：TGF2023 宽带匹配 功放 小信号 

分 类 号：TN722.75[电子电信—电路与系统]