CIGS电池、靶材及单靶溅射工艺研究进展  

Research Advances of CIGS Cells,Target and Single Target Sputtering Progress

作　　者：王丹[1] 余洲[1] 冀亚欣[1] 闫勇[1] 欧玉峰[1] 晏传鹏[1] 刘连[1] 张勇[1] 赵勇[1,2] 

机构地区：[1]西南交通大学超导研究开发中心材料先进技术教育部重点实验室,成都610031 [2]新南威尔士大学材料科学与工程学院,悉尼2052

出　　处：《材料导报》2016年第3期128-132,153,共6页Materials Reports

基　　金：国家自然科学基金(51271155,51377138,61404109);国家磁约束核聚变能研究专项资助项目(2011GB112001,2013GB110001);国际合作项目(2013DFA51050);国家高技术研究发展计划(863计划)(2014AA032701)

摘　　要：综述了蒸发法、溅射后硒化法、单靶直接溅射法制备CIGS光吸收层的工艺和电池性能,比较了它们的优缺点;详细介绍了粉末冶金参数(如烧结温度、压力、时间)对制备CIGS靶材致密度、成分均匀性的影响;着重阐述了单靶溅射工艺参数(如衬底温度、溅射功率、工作气压)对沉积的CIGS薄膜的相结构、形貌、光学及电学性能的影响。Three CIGS absorber and cell fabricated process of co-evaporation, sputtering and selenization, sin gle target sputtering are reviewed. Relative merits of these methods are investigated. The powder metallurgy method for quaternary target manufacture are described detailedly. The effect of parameters, such as temperature,pressure and hold time on the target density and composition uniformity are elaborated. The dependence of CIGS absorber phase structure, morphology and optical-electrical properties on the magnetron sputtering parameters （substrate tempera- ture, sputtering power, gas pressure） are emphatically introduced.

关 键 词：CIGS电池 粉末冶金 单靶溅射 光电性能 

分 类 号：TK02[动力工程及工程热物理]