磁控溅射法制备的CZGe_xT_(1-x)S薄膜的光电性能研究  

Growth and Photoelectronic Properties of Magnetron Sputtered CZGe_xT_(1-x)S Thin Film

作　　者：李金泽[1] 沈鸿烈[1] 任学明[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院江苏省能量转换材料与技术重点实验室,南京210016

出　　处：《真空科学与技术学报》2016年第3期357-361,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(61176062);江苏省工业支撑项目(BE2012103);江苏省前瞻性联合创新项目(BY2013003-08);江苏省研究生培养创新工程(KYLX_0256);中央高校基本科研业务费专项资金资助(NZ2013307);江苏高校优势学科建设工程项目

摘　　要：用先磁控溅射多层金属膜预置层后硫化的方法成功制备出CZGe_xT_(1-x)S薄膜,并主要研究了Ge含量对于该薄膜光电学性能的影响。分别采用X射线衍射仪、X射线能量色散谱仪、拉曼光谱仪、扫描电子显微镜,紫外-可见-近红外分光光度计和霍尔效应测量仪对不同Ge含量的CZGe_xT_(1-x)S薄膜的物相结构、元素比例、表面形貌、光学带隙以及电学性能进行了表征与分析。结果表明随着Ge含量的升高,晶粒尺寸不断长大,光学带隙从1.52上升至2.12 e V。同时,Ge替换Sn可减少薄膜内的缺陷,所制备的CZGe S薄膜的载流子浓度与迁移率分别为1.99×1018cm-3与9.712 cm2/Vs。The CZGe_xT_（1-x）S thin films were synthesized by sulfurizing the magnetron sputtered multi-layer metal precursors（ Zn / Ge / Sn / Cu） on glass substrate. The influence of the Ge-content on the microstructures and photoelectronic properties of the thin films was investigated with X-ray diffraction,scanning electron microscopy,Raman spectroscopy,ultraviolet-visible-near infrared（ UV-Vis-NIR） spectroscopy and Hall effect measurement. The results show that the Ge-content significantly affect the photo-electronic properties of the CZGe_xT_（1-x）S. To be specific,as the Ge-content increased（ x increased from 0 to 1）,the grain size increased; the band-gap increased from 1. 52 to 2. 12 eV,possibly because an increasing number of Ge atoms substituted for Sn atoms,resulting in reduction of defect density in the CZGe_xT_（1-x）S coatings. In addition,the carrier concentration and mobility of the CZGe S coatings were found to be 1. 99 × 1018cm- 3and 9. 712 cm2/ Vs,respectively.

关 键 词：CZGexT1-xS薄膜 溅射 Ge损失 霍尔效应 

分 类 号：O484.1[理学—固体物理]