Microstructure and lateral conductivity control of hydrogenated nanocrystalline silicon oxide and its application in a-Si：H/a-SiGe：H tandem solar cells  

作　　者：李天天 杨铁 方家 张德坤 孙建 魏长春 许盛之 王广才 刘彩池 赵颖 张晓丹 

机构地区：[1]Institute of Photo-electronic Thin Film Device and Technique, Nankai University [2]Collaborative Innovation Center of Chemical Science and Engineering (Tianjin) [3]Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin [4]Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education, Nankai University [5]School of Material Science and Engineering, Hebei University of Technology

出　　处：《Chinese Physics B》2016年第4期243-248,共6页中国物理B（英文版）

基　　金：supported by the Hi-Tech Research and Development Program of China(Grant No.2013AA050302);the National Natural Science Foundation of China(Grant No.61474065);Tianjin Municipal Research Key Program of Application Foundation and Advanced Technology,China(Grant No.15JCZDJC31300);the Key Project in the Science&Technology Pillar Program of Jiangsu Province,China(Grant No.BE2014147-3);the Specialized Research Fund for the Ph.D.Program of Higher Education,China(Grant No.20120031110039)

摘　　要：Phosphorous-doped hydrogenated nanocrystalline silicon oxide （n-nc-SiOx：H） films are prepared via radio frequency plasma enhanced chemical vapor deposition （RF-PECVD）. Increasing deposition power during n-nc-SiOx：H film growth process can enhance the formation of nanocrystalline and obtain a uniform microstructure of n-nc-SiOx：H film. In addition, in 20s interval before increasing the deposition power, high density small grains are formed in amorphous SiOx matrix with higher crystalline volume fraction （Ic） and have a lower lateral conductivity. This uniform microstructure indicates that the higher Ic can leads to better vertical conductivity, lower refractive index, wider optical band-gap. It improves the back reflection in a-Si：H/a-SiGe：H tandem solar cells acting as an n-nc-SiOx：H back reflector prepared by the gradient power during deposition. Compared with the sample with SiOx back reflector, with a constant power used in deposition process, the sample with gradient power SiOx back reflector can enhance the total short-circuit current density （Jsc） and the initial efficiency of a-Si：H/a-SiGe：H tandem solar cells by 8.3% and 15.5%, respectively.Phosphorous-doped hydrogenated nanocrystalline silicon oxide （n-nc-SiOx：H） films are prepared via radio frequency plasma enhanced chemical vapor deposition （RF-PECVD）. Increasing deposition power during n-nc-SiOx：H film growth process can enhance the formation of nanocrystalline and obtain a uniform microstructure of n-nc-SiOx：H film. In addition, in 20s interval before increasing the deposition power, high density small grains are formed in amorphous SiOx matrix with higher crystalline volume fraction （Ic） and have a lower lateral conductivity. This uniform microstructure indicates that the higher Ic can leads to better vertical conductivity, lower refractive index, wider optical band-gap. It improves the back reflection in a-Si：H/a-SiGe：H tandem solar cells acting as an n-nc-SiOx：H back reflector prepared by the gradient power during deposition. Compared with the sample with SiOx back reflector, with a constant power used in deposition process, the sample with gradient power SiOx back reflector can enhance the total short-circuit current density （Jsc） and the initial efficiency of a-Si：H/a-SiGe：H tandem solar cells by 8.3% and 15.5%, respectively.

关 键 词：gradient deposition power n-nc-SiOx：H films back reflector Tandem solar cells 

分 类 号：TB383.1[一般工业技术—材料科学与工程]