Study on electrical defects level in single layer two-dimensional Ta2O5  

作　　者：李大海 宋雄飞 胡林峰 王子仪 张荣君 陈良尧 张卫 周鹏 

机构地区：[1]Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China [2]ASIC & System State Key Laboratory, School of Microelectronics, Fudan University, Shanghai 200433, China [3]Department of Materials Science and Engineering, Fudan University, Shanghai 200433, China

出　　处：《Chinese Physics B》2016年第4期339-343,共5页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.11174058 and 61376093);the Fund from Shanghai Municipal Science and Technology Commission(Grant No.13QA1400400);the National Science and Technology Major Project,China(Grant No.2011ZX02707);the Innovation Program of Shanghai Municipal Education Commission(Grant No.12ZZ010)

摘　　要：Two-dimensional atomic-layered material is a recent research focus, and single layer Ta205 used as gate dielectric in field-effect transistors is obtained via assemblies of Ta205 nanosheets. However, the electrical performance is seriously affected by electronic defects existing in Ta2Os. Therefore, spectroscopic ellipsometry is used to calculate the transition energies and corresponding probabilities for two different charged oxygen vacancies, whose existence is revealed by x-ray photoelectron spectroscopy analysis. Spectroscopic ellipsometry fitting also calculates the thickness of single layer Ta2Os, exhibiting good agreement with atomic force microscopy measurement. Nondestructive and noncontact spectroscopic ellipsometry is appropriate for detecting the electrical defects level of single layer Ta2O5.Two-dimensional atomic-layered material is a recent research focus, and single layer Ta205 used as gate dielectric in field-effect transistors is obtained via assemblies of Ta205 nanosheets. However, the electrical performance is seriously affected by electronic defects existing in Ta2Os. Therefore, spectroscopic ellipsometry is used to calculate the transition energies and corresponding probabilities for two different charged oxygen vacancies, whose existence is revealed by x-ray photoelectron spectroscopy analysis. Spectroscopic ellipsometry fitting also calculates the thickness of single layer Ta2Os, exhibiting good agreement with atomic force microscopy measurement. Nondestructive and noncontact spectroscopic ellipsometry is appropriate for detecting the electrical defects level of single layer Ta2O5.

关 键 词：single layer electronic defects spectroscopic ellipsometry 

分 类 号：TB383.1[一般工业技术—材料科学与工程] O433[机械工程—光学工程]