An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect  

作　　者：刘凡宇 刘衡竹 刘必慰 郭宇峰 

机构地区：[1]School of Computer, National University of Defense Technology, Changsha 410073, China [2]Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 201131, China

出　　处：《Chinese Physics B》2016年第4期344-352,共9页中国物理B（英文版）

基　　金：supported by the Research Program of the National University of Defense Technology(Grant No.JC 13-06-04)

摘　　要：In this paper, the three-dimensional （3D） coupling effect is discussed for nanowire junctionless silicon-on-insulator （SOI） FinFETs. With fin width decreasing from 100 nm to 7 nm, the electric field induced by the lateral gates increases and therefore the influence of back gate on the threshold voltage weakens. For a narrow and tall fin, the lateral gates mainly control the channel and therefore the effect of back gate decreases. A simple two-dimensional （2D） potential model is proposed for the subthreshold region of junctionless SO1 FinFET. TCAD simulations validate our model. It can be used to extract the threshold voltage and doping concentration. In addition, the tuning of back gate on the threshold voltage can be predicted.In this paper, the three-dimensional （3D） coupling effect is discussed for nanowire junctionless silicon-on-insulator （SOI） FinFETs. With fin width decreasing from 100 nm to 7 nm, the electric field induced by the lateral gates increases and therefore the influence of back gate on the threshold voltage weakens. For a narrow and tall fin, the lateral gates mainly control the channel and therefore the effect of back gate decreases. A simple two-dimensional （2D） potential model is proposed for the subthreshold region of junctionless SO1 FinFET. TCAD simulations validate our model. It can be used to extract the threshold voltage and doping concentration. In addition, the tuning of back gate on the threshold voltage can be predicted.

关 键 词：coupling effect threshold voltage subthreshold region SOI FinFETs junctionless front gate lateral gate back gate 

分 类 号：TN386[电子电信—物理电子学] TP393[自动化与计算机技术—计算机应用技术]