Aluminum incorporation efficiencies in A- and C-plane AlGaN grown by MOVPE  

作　　者：韩东岳 李辉杰 赵桂娟 魏鸿源 杨少延 汪连山 

机构地区：[1]Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Institute of Semiconductors, Chinese Academy of Sciences

出　　处：《Chinese Physics B》2016年第4期418-421,共4页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.61504128,61504129,61274041,and 11275228);the National Basic Research Program of China(Grant No.2012CB619305);the National High Technology Research and Development Program of China(Grant Nos.2014AA032603,2014AA032609,and 2015AA010801);the Guangdong Provincial Scientific and Technologic Planning Program,China(Grant No.2014B010119002)

摘　　要：The aluminum incorporation efficiencies in nonpolar A-plane and polar C-plane A1GaN films grown by metalorganic vapour phase epitaxy （MOVPE） are investigated. It is found that the aluminum content in A-plane A1GaN film is obviously higher than that in the C-plane sample when the growth temperature is above 1070 ℃. The high aluminum incorporation efficiency is beneficial to fabricating deep ultraviolet optoelectronic devices. Moreover, the influences of the gas inlet ratio, the V/Ⅲ ratio, and the chamber pressure on the aluminum content are studied. The results are important for growing the A1GaN films, especially nonpolar A1GaN epilayers.The aluminum incorporation efficiencies in nonpolar A-plane and polar C-plane A1GaN films grown by metalorganic vapour phase epitaxy （MOVPE） are investigated. It is found that the aluminum content in A-plane A1GaN film is obviously higher than that in the C-plane sample when the growth temperature is above 1070 ℃. The high aluminum incorporation efficiency is beneficial to fabricating deep ultraviolet optoelectronic devices. Moreover, the influences of the gas inlet ratio, the V/Ⅲ ratio, and the chamber pressure on the aluminum content are studied. The results are important for growing the A1GaN films, especially nonpolar A1GaN epilayers.

关 键 词：metalorganic chemical vapor deposition nitrides semiconducting III-V materials semiconduct- ing ternary compounds 

分 类 号：O484.1[理学—固体物理]