Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process  

作　　者：于俊庭 陈书明 陈建军 黄鹏程 宋睿强 

机构地区：[1]College of Computer, National University of Defense Technology, Changsha 410073, China [2]National Laboratory for Parallel and Distributed Processing, National University of Defense Technology, Changsha 410073, China

出　　处：《Chinese Physics B》2016年第4期495-500,共6页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.61376109,61434007,and 61176030)

摘　　要：Charge sharing is becoming an important topic as the feature size scales down in fin field-effect-transistor （FinFET） technology. However, the studies of charge sharing induced single-event transient （SET） pulse quenching with bulk FinFET are reported seldomly. Using three-dimensional technology computer aided design （3DTCAD） mixed-mode simulations, the effects of supply voltage and body-biasing on SET pulse quenching are investigated for the first time in bulk FinFET process. Research results indicate that due to an enhanced charge sharing effect, the propagating SET pulse width decreases with reducing supply voltage. Moreover, compared with reverse body-biasing （RBB）, the circuit with forward body-biasing （FBB） is vulnerable to charge sharing and can effectively mitigate the propagating SET pulse width up to 53% at least. This can provide guidance for radiation-hardened bulk FinFET technology especially in low power and high performance applications.Charge sharing is becoming an important topic as the feature size scales down in fin field-effect-transistor （FinFET） technology. However, the studies of charge sharing induced single-event transient （SET） pulse quenching with bulk FinFET are reported seldomly. Using three-dimensional technology computer aided design （3DTCAD） mixed-mode simulations, the effects of supply voltage and body-biasing on SET pulse quenching are investigated for the first time in bulk FinFET process. Research results indicate that due to an enhanced charge sharing effect, the propagating SET pulse width decreases with reducing supply voltage. Moreover, compared with reverse body-biasing （RBB）, the circuit with forward body-biasing （FBB） is vulnerable to charge sharing and can effectively mitigate the propagating SET pulse width up to 53% at least. This can provide guidance for radiation-hardened bulk FinFET technology especially in low power and high performance applications.

关 键 词：body-biasing SET pulse quenching charge sharing bulk FinFET process 

分 类 号：TN386[电子电信—物理电子学] TN948.4