InGaN太阳电池光电转换特性的理论计算  

Theoretical calculation of photoelectric conversion efficiency of InGaN solar cell

作　　者：张玉宁[1] 剡文杰[1] 

机构地区：[1]宁夏大学物理电气信息学院,宁夏银川750021

出　　处：《电源技术》2016年第3期604-606,共3页Chinese Journal of Power Sources

基　　金：国家自然科学基金(61066002)

摘　　要：从p-n结太阳电池的理论模型和InxGa1-xN带隙的经验公式出发,结合实际材料参数,通过改变In组分来调节InxGa1-xN带隙。计算了标准太阳光谱AM1.5光子通量及该光谱下InxGa1-xN单结和InxGa1-xN/Ga P异质双结太阳电池的光电转换效率。结果显示,InxGa1-xN单结太阳电池的最大转换效率是27.28%,与之对应的In组分为0.82。InxGa1-xN/Ga P异质双结太阳电池的最高转换效率为30.75%,对应的In组分是0.74。这些结果可作为设计制备In Ga N太阳电池的理论依据。Based on the theoretical model of p-n junction solar cells and empirical energy gap formula of InxGa1-xN,combining with the actual material parameters, the energy gap of InxGa1-xN was changed by adjusting the In contents. The photon flux density of AM1.5 solar spectrum and photoelectric conversion efficiency of single-junction InxGa1-xN and double-heterojunction InxGa1-xN solar cells were calculated. The results show that the maximum solar energy conversion efficiency of InxGa1-xN single-junction solar cells is 27.28%, the In contents is 0.82, and that of double heterojuction InxGa1-xN/Ga P solar cells with In contents of 0.74 achieves up to 30.75%. These results may provide a theoretical basis for the preparation of In Ga N solar cells.

关 键 词：光电子材料 In GA N太阳电池 光电特性 转换效率 理论计算 

分 类 号：TM914.4[电气工程—电力电子与电力传动]