集成电路用纳米晶Cu-Al合金的制备及其结构、性能分析  

Preparation of Nanocrystalline Cu-Al Alloy Used in Integrated Circuits and Analysis of Its Structure and Performance

作　　者：朱晓[1] 石珍[2] 

机构地区：[1]重庆工程职业技术学院,重庆400037 [2]重庆大学机械传动国家重点实验室,重庆400030

出　　处：《铸造技术》2016年第3期421-423,共3页Foundry Technology

摘　　要：采用大塑性变形法(SPD)制备出了集成电路用纳米晶材料,同时利用透射电子显微镜(TEM)及电子万能试验机对不同SPD方法生产的Cu-Al合金进行微结构分析及拉伸性能试验。结果表明:层错能是影响纳米晶Cu-Al合金微观结构与拉伸性能的关键性因素,纳米晶Cu-Al合金的微观结构形成机制,平均晶粒尺寸以及强塑性匹配程度均随着层错能的降低而发生改变。The large plastic deformation method was used to prepare nanocrystalline Cu-Al alloy in integrated circuit, and transmission electron microscopy（TEM） and electronic universal testing machine were used to analyze the microstructure and the tensile properties of Cu-Al alloy produced by different SPD methods. The results show that the stacking fault energy is a key factor affecting the microstructure and tensile properties of the Cu-Al alloy, the formation mechanism of the microstructure of nanocrystalline Cu-Al alloy, the average grain size and strong plastic matching degree change with the decrease of stacking fault energy.

关 键 词：纳米晶 CU-AL合金 微结构 层错能 

分 类 号：TN405[电子电信—微电子学与固体电子学] TB383.1[一般工业技术—材料科学与工程] TG379[金属学及工艺—金属压力加工]