Al/CuO肖特基结换能元芯片的非线性电爆换能特性  

Nonlinear Energy Conversion Performance of Electrical Explosion of Schottky Barrier Structured Al/CuO Transduction Chip

作　　者：李杰[1] 朱朋[1] 胡博[1] 沈瑞琪[1] 叶迎华[1] 吴立志[1] 

机构地区：[1]南京理工大学化工学院,江苏南京210094

出　　处：《含能材料》2016年第3期279-283,共5页Chinese Journal of Energetic Materials

基　　金：国家自然科学基金青年基金资助(51201091)

摘　　要：依据肖特基势垒理论,设计并制备了Al/CuO肖特基结换能元芯片。用击穿电压仪研究了换能元芯片的电击穿性能,用电容放电的激发方式研究了芯片的电爆特性。结果表明,对前者,芯片存在发火阈值,具有整流特性,击穿电压与肖特基结的个数无关,击穿电压为8 V;对后者,芯片也存在发火阈值,发火阈值与肖特基结数呈正相关,芯片还具有发火延迟特性。延迟时间的长短与肖特基结数也呈正相关。同时芯片还具有多次激发而连续发火的特性。显示Al/CuO肖特基结换能元芯片是一种具有非线性电爆换能特性的新型电爆换能元。Al/CuO Schottky junction transduction chip was designed and prepared based on Schottky barrier theory. The electrical initiation performance of the transduction chip was studied by a breakdown voltage instrument. The electrical explosion character- istics of the chips were studied by a capacitance discharge mode of capacitor discharging circuit. Results show that fot the former, the chips exist an ignition threshold and have the haracteristics of rectification. The breakdown voltage has nothing to do with the number of Schottky junction. The breakdown voltage is 8 V. For the latter, the chips also exist the ignition threshold. The ignition threshold increases with increasing the number of Schottky junction. The chips also have the characteristics of delayed discharge. The delayed discharge time prolongs with increasing_the number of schottky junction. At the same time, the chips also have the characteristic of continuous firing when stimulating repeatedly, which revealing that the Al/CuO Schottky junction transduction chip is a novel electrical-explosive device with a nonlinear energy conversion characteristic.

关 键 词：含能材料 Al/CuO肖特基结 换能元芯片 电爆特性 

分 类 号：TQ560.1[化学工程—炸药化工]