Influence of Blocking Interlayer in Blue Organic Light-Emitting Diodes with Different Thicknesses of Emitting Layer and Interlayer  

作　　者：程爽 沈建琪 寇志起 王小平 

机构地区：[1]College of Science,University of Shanghai for Science and Technology

出　　处：《Chinese Physics Letters》2016年第2期141-144,共4页中国物理快报（英文版）

摘　　要：A series of blue organic light-emitting diodes with electron or hole blocking interlayer are fabricated. Different structures of blocking interlayers can influence the position of the recombination zone due to the fact that they confine carriers in different ways. We find that the double hole blocking interlayer structure can balance carrier injection more effectively. Its power and current efficiency are more stable and the current efficiency value is 30.2cd/A at lO00cd/m^2. Decreasing the thicknesses of the emitting layer and interlayers is in favor of the power efficiency. The performance of the device is also affected by changing the interlayer position when we use hole and electron blocking material as interlayers simultaneously.A series of blue organic light-emitting diodes with electron or hole blocking interlayer are fabricated. Different structures of blocking interlayers can influence the position of the recombination zone due to the fact that they confine carriers in different ways. We find that the double hole blocking interlayer structure can balance carrier injection more effectively. Its power and current efficiency are more stable and the current efficiency value is 30.2cd/A at lO00cd/m^2. Decreasing the thicknesses of the emitting layer and interlayers is in favor of the power efficiency. The performance of the device is also affected by changing the interlayer position when we use hole and electron blocking material as interlayers simultaneously.

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分 类 号：TN383.1[电子电信—物理电子学] TN204