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作 者:张东[1] 王存旭[1] 王晓文[1] 王健[1] 赵琰[1] 宋世巍[1] 李昱材[1] 王刚[1] 杜世鹏[1] 司红代[1] 许鉴[1] 王宝石[1] 丁艳波[1] 王晗[1] 郭瑞[1] 刘莉莹[1] 王帅杰[1] 高微[1] 柯韵杰 谢芳[1]
出 处:《沈阳师范大学学报(自然科学版)》2016年第1期1-5,共5页Journal of Shenyang Normal University:Natural Science Edition
基 金:教育部重点实验室项目(LABKF1406);辽宁省教育厅科学研究一般项目(L2015377;L2014516)
摘 要:采用新型材料作为本征层很大层度上解决了薄膜材料光衰减的问题,有效保证了薄膜太阳能电池的发电效率。采用可调带隙以及具有量子阱结构InxGa1-xN晶体薄膜作为Ⅰ层,可以有效提高薄膜太阳能电池转换效率,再采用GZO透明薄膜既作为缓冲层又作为透明导电电极,增加了薄膜太阳能电池的透光率,同时提高了透明电极的耐腐蚀性能,使得薄膜太阳能电池的光电转换效率得到了很大的提高。采用AlN作为绝缘层,其晶格失配率相差很小,可以制备出质量均匀的Al背电极。该柔性电池具有优异的柔软性,重量轻,携带方便,具有潜在的市场空间,而且制备工艺简单,可实现规模生产。The study were using the new material as the intrinsic layer,this method is the excellent solution to the problem of thin film material of the light attenuation,which ensure the power generation efficiency of thin film solar cells.The next process is that we use the ECR-PEMOCVD system to deposit the variable bandgap intrinsic layer InxGa1-xN quantum well crystal thin film under the condition of hydrogen atmosphere to carry trimethyl gallium(TMGa),trimethyl indium(TMIn)and nitrogen in the ECR-PEMOCVD system.The study uses an adjustable band gap and the quantum well structure InxGa1-xN as the intrinsic layer,which can improve the conversion efficiency of thin-film solar cells.The GZO transparent film was used as both the buffer layer and the transparent conductive electrode,which can not only increase the transmittance of the thin film solar cell,but also improve the corrosion resistance of the transparent electrodes,so that the photoelectric conversion efficiency of thin film solar cells has been greatly improved.In this study,we used AlN as the insulating layer,the lattice mismatch ratio is small between the AlN and Al,the Al back electrode are uniform with the high quality under this condition.The flexible battery is of excellent flexibility,light weight,easy to carry,which can possess the potential market space.And the simple preparation process to enable mass production.
分 类 号:TN304.55[电子电信—物理电子学]
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