La_(0.56)Li_(0.33)TiO_3薄膜的制备及退火对其光电性能的影响  

Preparation of lithium lanthanum titanate thin film and the influence of annealing on its photoelectric properties

作　　者：乔恺 李合琴[1] 王伟[1] 陶磊[1] 周矗[1] 

机构地区：[1]合肥工业大学材料科学与工程学院,安徽合肥230009

出　　处：《合肥工业大学学报（自然科学版）》2016年第3期324-327,共4页Journal of Hefei University of Technology：Natural Science

基　　金：安徽省高校自然科学基金资助项目(KJ2009A091;KJ2012A228);中国科学院战略性先导科技专项资助项目(XDA03040000)

摘　　要：文章采用射频磁控溅射法在氧化铟锡(indium-tin oxide,ITO)玻璃衬底上制备了钛酸镧锂(lithium lanthanum titanate,LLTO)薄膜,并在氩气中经100、200、300℃退火2h。对薄膜的形貌、结构、离子电导率和光电性能进行测试。结果表明,室温下制备的LLTO薄膜为非晶态,随着退火温度的升高,薄膜的离子电导率和可见光透过率均随之升高,经300℃氩气气氛退火后,薄膜的离子电导率为5.0×10-6 S/cm,可见光平均透过率为89%。Lithium lanthanum titanate（LLTO） thin film was prepared on indium-tin oxide（IT（））/glass substrates by radio frequency（RF） magnetron sputtering at room temperature, and then annealed from 100 ℃, 200 ℃ and 300℃ respectively for 2 h under Ar atmosphere. The morphology, struc- ture, ionic conductivity and photoelectric performance of the LLTO film were studied. The results show that the LLTO film deposited at room temperature is amorphous. The ionic conductivity and transmittance of LLTO film increase with the ascending annealing temperature. The ionic conductivity of LLTO thin film annealed at 300℃ under Ar atmosphere is 5.0X 10.6 S/cm, and its average trans- mittance is 89%.

关 键 词：钛酸镧锂薄膜 射频磁控溅射 退火 离子电导率 光电性能 

分 类 号：TB43[一般工业技术]