溅射氧化耦合法制备Ti掺杂VO_2薄膜及其极窄回滞特性  

Preparation of Ti-Doped VO_2 Thin Films with Sputtering Oxidation Coupling Method and the Extremely Narrow Hysteresis Widths

作　　者：顾聪聪 黄康[1] 陈飞[1] 徐晓峰[1] 

机构地区：[1]东华大学理学院,上海201620

出　　处：《东华大学学报（自然科学版）》2016年第1期124-130,共7页Journal of Donghua University(Natural Science)

基　　金：上海市科委基础研究重大资助项目(10DJ1400204)

摘　　要：采用溅射氧化耦合法,在Al2O3基底上成功实现了对VO_2薄膜的Ti元素掺杂.通过光电子能谱(XPS)的分析,试验制备的VO_2薄膜具有较高的纯度,只含有少量+3价V,同时也对Ti元素的含量进行了定量分析,分析结果证明了试验设计的合理性.通过测量VO_2薄膜在不同温度下的方块电阻,绘出了其电阻-温度曲线,并分析得到了Ti不同掺杂含量下的相变温度与回滞宽度.研究结果表明,Ti掺杂对VO_2薄膜的相变温度没有明显的影响,但可以有效地使VO_2薄膜的回滞宽度变窄,甚至接近于单晶VO_2的回滞宽度.该试验对于VO_2薄膜的开关器件应用具有重要意义.Ti element doping to VO_2 thin films were realized on sapphire substrates by sputtering oxidation coupling method.The analyses of X-ray photoelectron spectroscopy（XPS）reflected that the VO_2 thin films fabricated in lab had high purity with only a small amount of＋3 valence vanadium ions,besides,the Ti contents were also conducted which prove the feasibility of experiment design.Phase transition temperature and hysteresis width were achieved by the analyses of the temperature dependent resistance curves.The research results showed that Ti doping won＇t affect the phase transition temperature.However,Ti doping can effectively narrow the hysteresis width of thin films,moreover,the hysteresis width can be even close to the monocrystalline VO_2.This experiment is of great importance for the application of VO_2 films as switching device.

关 键 词：溅射氧化耦合法 VO2薄膜 Ti掺杂 回滞宽度 开关器件 

分 类 号：O484.41[理学—固体物理]