Mo掺杂VO_2薄膜的制备及其相变性能  

Preparation of Mo-doped Vanadium Dioxide Thin Films and Its Phase Transition Properties

作　　者：陈飞[1] 黄康[1] 顾聪聪 徐晓峰[1] 

机构地区：[1]东华大学理学院,上海201620

出　　处：《东华大学学报（自然科学版）》2016年第1期131-136,共6页Journal of Donghua University(Natural Science)

基　　金：上海市科委基础研究重大资助项目(10DJ1400204)

摘　　要：以蓝宝石片(Al2O3)为基底,使用溅射氧化耦合法,通过氧化V/Mo/V结构的金属薄膜夹层制备了不同Mo掺杂量的VO_2薄膜,使用原子力电子显微镜、光电子能谱和四探针测试仪对薄膜的形貌、成分和相变特性进行了分析.结果表明:Mo元素成功掺杂进入VO_2的晶格,且VO_2薄膜相变温度从65.03℃降低至51.36℃,同时伴随着回滞宽度和相变数量级一定程度的减少.此试验成功改变了VO_2薄膜的相变温度,对于智能窗等方向的应用具有重要意义.Mo-doped vanadium dioxide（VO_2）thin films were prepared on the sapphire substrate by oxidizing V/Mo/V sandwich structure metal thin films using sputtering and oxidative coupling method.Morphology,composition and phase transition properties of the samples were analysed by atomic force microscope（AFM）,X-ray photoelectron spectroscopy（XPS）and four point probe techniques.The results revealed that molybdenum element was successfully doped into the crystal lattice of VO_2 matrix and the phase transition temperature of VO_2 decreased from65.03 ℃ to 51.36 ℃.Meanwhile,the hysteresis width and order of magnitude were decreased in a certain degree.The phase transition temperature of VO_2 thin film is modulated successfully by Mo-doping experiments.It is of great significance on application of smart window.

关 键 词：二氧化钒 Mo掺杂 相变特性 智能窗 

分 类 号：O484.42[理学—固体物理]