Source of Low Frequency Noise in SiGe HBTs  

作　　者：王凯 刘远 邓婉玲 

机构地区：[1]School of Information Science and Technology,Jinan University [2]Science and Technology on Reliability Physics and Application of Electronic Component Laboratory,CEPREI

出　　处：《Journal of Donghua University(English Edition)》2015年第6期1052-1054,共3页东华大学学报（英文版）

摘　　要：The performance of low frequency noise(LFN)in SiGe heterojunction bipolar transistors(HBTs)is presented.The experimental results indicate that the performance of LFN in SiGe HBTs agrees with classical LFN theory.Based on classical LFN theory,the source of LFN in SiGe HBTs is confirmed from Hooge modal and McWhorter model simultaneously.Furthermore,according to this results,the base current coefficient α is extracted and the relationship between current noise power spectral density and base current is also shown.The performance of low frequency noise（LFN）in SiGe heterojunction bipolar transistors（HBTs）is presented.The experimental results indicate that the performance of LFN in SiGe HBTs agrees with classical LFN theory.Based on classical LFN theory,the source of LFN in SiGe HBTs is confirmed from Hooge modal and McWhorter model simultaneously.Furthermore,according to this results,the base current coefficient α is extracted and the relationship between current noise power spectral density and base current is also shown.

关 键 词：SIGE HETEROJUNCTION BIPOLAR transistors(HBTs) low frequency noise 

分 类 号：TN4[电子电信—微电子学与固体电子学]