碳纳米管脉冲式场发射中所存在的尖峰及其解决方法（英文）  

The Sharp Peak in CNTs Pulsed Emission and the Solutions to Its Decrease

作　　者：刘春毅 何艳康 周公羽 雷威[1] 

机构地区：[1]东南大学电子科学与工程学院,南京210096

出　　处：《电子器件》2016年第1期6-11,共6页Chinese Journal of Electron Devices

摘　　要：从电路负载方面考虑,将二级平板式碳纳米管场发射结构看做一个电容和可变电阻的并联结构。根据测试数据计算出电容值在皮法级,可变电阻在兆欧到千欧变化。通过电路仿真,分析了此结构在脉冲式下的负载特性。以此得出在脉冲前沿和后沿产生尖峰的原因。根据仿真结构提出增加RLC和二极管来消除尖峰的方法。实验证明,整体负载特性的改变使得发生发射结构上的脉冲尖峰基本得到消除。Treat the 2-level-plan CNTs field emission structure as the circuit load,which can be considered as a ca-pacitance paralleled with a variable resistance. From the test data,the value of the capacitance is about pF and the resistance ranges from MΩ to KΩ. We analyze the load characteristic of the structure from circuit simulation and find the causes of the sharp peak at the positive and negative edge. According to the simulation results,we present adding RLC and diode to eliminate the sharp peak. From the experiments,we find that changing the whole load characteristic can solve this problem.

关 键 词：纳米材料 场发射 电路仿真 尖峰消除 

分 类 号：TN311[电子电信—物理电子学]