退火温度对非晶铟钨氧薄膜晶体管特性的影响  

Effect of Annealing Temperature on Performance of Amorphous InWO Thin Film Transistors

作　　者：许玲[1] 吴崎[1] 董承远[1] 

机构地区：[1]上海交通大学电子工程系,上海200240

出　　处：《发光学报》2016年第4期457-462,共6页Chinese Journal of Luminescence

基　　金：国家自然科学基金面上项目(61474075);国家自然科学基金重点项目(61136004)资助

摘　　要：非晶铟钨氧(a-IWO)薄膜晶体管(TFT)具有高迁移率和高稳定性的优点,但其适合于实际生产的制备工艺条件尚有待摸索。本文研究了退火温度对a-IWO TFT电学特性影响的基本规律和内部机理。实验结果表明,随着退火温度的升高,a-IWO TFT的场效应迁移率也相应增加,这是由于高温退火下a-IWO薄膜中氧空位含量增多并进而导致载流子浓度增加的缘故。此外,a-IWO TFT的亚阈值摆幅和阈值电压在200℃下退火达到最佳,我们认为主要原因在于此时a-IWO薄膜的表面粗糙度最小并形成了最佳的前沟道界面状态。Amorphous indium tungsten oxide（ a-IWO） thin film transistors（ TFTs） show superior electrical performance and stable properties,but their industrial fabrication methods still need to be developed. In this study,the effect of annealing temperature on the electrical performance of a-IWO TFTs was investigated,where the related basic dependence and physical essence were involved. The experimental results indicate that the field-effect mobility of a-IWO TFTs increases gradually with the annealing temperature increasing,due to the more oxygen vacancies as well as the larger carrier concentration at higher annealing temperatures. Meanwhile,annealing at 200 ℃ led to the best subthreshold swing and threshold voltage of a-IWO TFTs,as is assumed to mainly result from the best front-channel interface caused by the smallest roughness of the a-IWO films annealed at 200 ℃.

关 键 词：非晶铟钨氧 薄膜晶体管 退火温度 氧空位 表面粗糙度 

分 类 号：TN321.5[电子电信—物理电子学]