Co掺杂对纳米TiO_2薄膜磁电阻特性的影响  

Influence of Co-doping on the magnetoresistance of TiO_2 nanofilms

作　　者：贾利云[1] 许佳玲[1] 曲蛟[1] 范虹[1] 李秀玲[2] 侯登录[2] 

机构地区：[1]河北建筑工程学院数理系,河北张家口075000 [2]河北师范大学物理科学与信息工程学院,河北石家庄050024

出　　处：《磁性材料及器件》2016年第2期4-7,66,共5页Journal of Magnetic Materials and Devices

基　　金：国家自然科学基金资助项目(10774037);河北省科技厅指导计划项目(13211032);河北建筑工程学院青年基金资助项目(KYQ-201324)

摘　　要：为了研究复合纳米TiO_2材料的磁电阻特性,通过磁控溅射方法和原位退火工艺制备了Co掺杂TiO_2薄膜样品。利用X射线衍射仪和扫描探针显微镜观测薄膜样品的微结构特征,利用振动样品磁强计和多功能物理性质测量系统测试样品的磁特性和磁电阻。结果表明,Co掺杂量对TiO_2薄膜的磁电阻特性有重要影响:磁性金属含量较高的薄膜样品出现较大的磁电阻,磁电阻峰值为-14%,峰值温度为250K;磁性金属含量较低薄膜样品具有较小的磁电阻值;由于Co掺杂影响了薄膜的微结构和导电性,导致出现了特殊的磁电阻效应。In order to study the magnetoresistance of TiO_2 nanofilms, the Co-doped TiO_2 nanofilms have been fabricated by dc facing-target magnetron sputtering and subsequently annealed in situ vacuum. The phase identification of samples has been carried out by X-ray diffraction. The morphologies and domain structures were observed by scanning probe microscope. Magnetic properties were measured by vibrating sample magnetometer. The magnetoresistance were measured by physical property measurement system. The result shows that the magnetoresistance of the films depends strongly on the Co concentration. The magnetoresistance of film is tested under different temperatures,when the temperature is 250 K that there exist peak values at-14%. The Co doping affectes the structure and conductivity,eventually leads to the special phenomenon of the magnetoresistance.

关 键 词：纳米TIO2薄膜 CO掺杂 磁电阻 微结构 

分 类 号：O484.3[理学—固体物理] TM27[理学—物理]