Bi/Pt底层对Co/Ni多层膜反常霍尔效应的影响  

Influence of Bi/Pt underlayer on the anomalous Hall effect in Co/Ni multilayers

作　　者：向萍萍[1] 王伟[1] 程鹏[1] 李宝河[1] 崔派 白云峰[1] 

机构地区：[1]北京工商大学理学院,北京102488

出　　处：《磁性材料及器件》2016年第2期12-14,79,共4页Journal of Magnetic Materials and Devices

基　　金：国家自然科学基金资助项目(11174020);北京工商大学特色科研团队项目(19008001076);北京市大学生科研计划项目(SJ20142045)

摘　　要：采用直流磁控溅射法在玻璃基片上制备了一系列分别以Pt和Bi/Pt为底层的Co/Ni多层膜样品。通过研究Bi的厚度、周期层数、周期层中的Co和Ni的厚度以及退火温度对样品反常霍尔效应的影响,最终获得了霍尔效应最强、良好的霍尔曲线矩形度,同时具有良好的垂直各向异性的最佳样品Bi(1nm)/Pt(5nm)/[Co(0.3nm)Ni(0.5nm)]1/Co(0.3nm)/Pt(1nm)。实验表明,退火处理有利于增强反常霍尔效应。The samples of Co/Ni multilayer with Pt and Bi/Pt underlayer were successfully prepared on glass substrates by magnetron sputtering technique. The dependence of anomalous Hall effect was investigated on Bi layer thickness, periodic numbers, Co and Ni inner layer thickness, and annealing temperature. As a result, the optimum multilayer structure of Bi（1nm）/Pt（5nm）/[Co（0.3nm）Ni（0.5nm）]1/Co（0.3nm）/Pt（1nm） was obtained with high Hall resistance, better rectangle degree and perpendicular magnetic anisotropy. The experiment indicates that the annealing treatment is beneficial to enhancing the anomalous Hall effect.

关 键 词：Co/Ni多层膜 反常霍尔效应 霍尔电阻 垂直各向异性 

分 类 号：O484.3[理学—固体物理] TM27[理学—物理]