Low Crosstalk Three-Color Infrared Detector by Controlling the Minority Carriers Type of InAs/GaSb Superlattices for Middle-Long and Very-Long Wavelength  

作　　者：蒋洞微 向伟 国凤云 郝宏玥 韩玺 李晓超 王国伟 徐应强 于清江 牛智川 

机构地区：[1]Opto-electric Information Science,School of Materials Science and Engineering,Harbin Institute of Technology [2]State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences [3]Synergetic Innovation Center of Quantum Information and Quantum Physics,University of Science and Technology of China

出　　处：《Chinese Physics Letters》2016年第4期151-154,共4页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant Nos 2014CB643903,2013CB932904,2012CB932701 and 2011CB922201;the National Special Funds for the Development of Major Research Equipment and Instruments of China under Grant No 2012YQ140005;the Strategic Priority Research Program(B)of the Chinese Academy of Sciences under Grant No XDB01010200;the China Postdoctoral Science Foundation-funded Project under Grant No 2014M561029;the Program for New Century Excellent Talents in University under Grant No NCET-10-0066;the National High-Technology Research and Development Program of China under Grant No 2013AA031502;the Science and Technology Innovation Project of Harbin City under Grant No2011RFLXG006;the National Natural Science Foundation of China under Grant Nos 61274013,U1037602,61306013,51202046,and 61290303;the China Postdoctoral Science Foundation under Grant Nos 2012M510144 and 2013T60366;the Fundamental Research Funds for the Central Universities under Grant Nos HIT.NSRIF.2013006 and HIT.BRETIII.201403

摘　　要：We report a type-Ⅱ InAs/GaSb superlattice three-color infrared detector for mid-wave （MW）, long-wave （LW）, and very long-wave （VLW） detections. The detector structure consists of three contacts of NIPIN architecture for MW and LW detections, and hetero-junction NIP architecture for VLW detection. It is found that the spectral crosstalks can be significantly reduced by controlling the minority carriers transport via doping beryllium in the two active regions of NIPIN section. The crosstalk detection at MW, LW, and VLW signals are achieved by selecting the bias voltages on the device. At 77K, the cutoff wavelengths of the three-color detection are 5.3μm （at OmV）, 141μm （at 300mV） and 19μm （at -20mV） with the detectivities of 4.6xlO11 cm.Hzl/ZW-1, 2.3×10^10 cm.Hzl/2W-1, and 1.0×10^10cm.Hzl/2W-1 for MW, LW and VLW. The crosstalks of the MW channel, LW channel, and VLW channel are almost 0, 0.25, and 0.6, respectively.We report a type-Ⅱ InAs/GaSb superlattice three-color infrared detector for mid-wave （MW）, long-wave （LW）, and very long-wave （VLW） detections. The detector structure consists of three contacts of NIPIN architecture for MW and LW detections, and hetero-junction NIP architecture for VLW detection. It is found that the spectral crosstalks can be significantly reduced by controlling the minority carriers transport via doping beryllium in the two active regions of NIPIN section. The crosstalk detection at MW, LW, and VLW signals are achieved by selecting the bias voltages on the device. At 77K, the cutoff wavelengths of the three-color detection are 5.3μm （at OmV）, 141μm （at 300mV） and 19μm （at -20mV） with the detectivities of 4.6xlO11 cm.Hzl/ZW-1, 2.3×10^10 cm.Hzl/2W-1, and 1.0×10^10cm.Hzl/2W-1 for MW, LW and VLW. The crosstalks of the MW channel, LW channel, and VLW channel are almost 0, 0.25, and 0.6, respectively.

关 键 词：GaSb on of Low Crosstalk Three-Color Infrared Detector by Controlling the Minority Carriers Type of InAs/GaSb Superlattices for Middle-Long and Very-Long Wavelength by InAs for LONG 

分 类 号：TN215[电子电信—物理电子学] TN213