The Instability of Terahertz Plasma Waves in Two Dimensional Gated and Ungated Quantum Electron Gas  

作　　者：张丽萍 

机构地区：[1]School of Sciences,Lanzhou University of Technology

出　　处：《Plasma Science and Technology》2016年第4期360-363,共4页等离子体科学和技术（英文版）

基　　金：supported by National Natural Science Foundation of China(No.10975114)

摘　　要：The instability of terahertz（THz）plasma waves in two-dimensional（2D）quantum electron gas in a nanometer field effect transistor（FET）with asymmetrical boundary conditions has been investigated.We analyze THz plasma waves of two parts of the 2D quantum electron gas：gated and ungated regions.The results show that the radiation frequency and the increment（radiation power）in 2D ungated quantum electron gas are much higher than that in 2D gated quantum electron gas.The quantum effects always enhance the radiation power and enlarge the region of instability in both cases.This allows us to conclude that 2D quantum electron gas in the transistor channel is important for the emission and detection process and both gated and ungated parts take part in that process.The instability of terahertz（THz）plasma waves in two-dimensional（2D）quantum electron gas in a nanometer field effect transistor（FET）with asymmetrical boundary conditions has been investigated.We analyze THz plasma waves of two parts of the 2D quantum electron gas：gated and ungated regions.The results show that the radiation frequency and the increment（radiation power）in 2D ungated quantum electron gas are much higher than that in 2D gated quantum electron gas.The quantum effects always enhance the radiation power and enlarge the region of instability in both cases.This allows us to conclude that 2D quantum electron gas in the transistor channel is important for the emission and detection process and both gated and ungated parts take part in that process.

关 键 词：two dimensional gated and ungated quantum electron gas THz plasma waves radiation power radiation frequency nanometer field effect transistor 

分 类 号：O53[理学—等离子体物理]