AlN/GaN high electron mobility transistors on sapphire substrates for Ka band applications  

作　　者：宋旭波 吕元杰 顾国栋 王元刚 谭鑫 周幸叶 敦少博 徐鹏 尹甲运 魏碧华 冯志红 蔡树军 

机构地区：[1]National Key Laboratory of ASIC, Hebei Semiconductor Research Institute

出　　处：《Journal of Semiconductors》2016年第4期69-72,共4页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.61306113)

摘　　要：We report the DC and RF characteristics of AlN/GaN high electron mobility transistors（HEMTs） with the gate length of 100 nm on sapphire substrates. The device exhibits a maximum drain current density of 1.29 A/mm and a peak transconductance of 440 m S/mm. A current gain cutoff frequency and a maximum oscillation frequency of 119 GHz and 155 GHz have been obtained, respectively. Furthermore, the large signal load pull characteristics of the AlN/GaN HEMTs were measured at 29 GHz. An output power density of 429 m W/mm has been demonstrated at a drain bias of 10 V. To the authors＇ best knowledge, this is the earliest demonstration of power density at the Ka band for Al N/Ga N HEMTs in the domestic, and also a high frequency of load-pull measurements for Al N/Ga N HEMTs.We report the DC and RF characteristics of AlN/GaN high electron mobility transistors（HEMTs） with the gate length of 100 nm on sapphire substrates. The device exhibits a maximum drain current density of 1.29 A/mm and a peak transconductance of 440 m S/mm. A current gain cutoff frequency and a maximum oscillation frequency of 119 GHz and 155 GHz have been obtained, respectively. Furthermore, the large signal load pull characteristics of the AlN/GaN HEMTs were measured at 29 GHz. An output power density of 429 m W/mm has been demonstrated at a drain bias of 10 V. To the authors＇ best knowledge, this is the earliest demonstration of power density at the Ka band for Al N/Ga N HEMTs in the domestic, and also a high frequency of load-pull measurements for Al N/Ga N HEMTs.

关 键 词：AlN/GaN HEMTs small signal large signal power density 

分 类 号：TN386[电子电信—物理电子学]